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參數(shù)資料
| 型號(hào)： | IRF1302L |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 20V的，的Rds（on）\u003d 4.0mohm，身份證\u003d 174A章） |
| 文件頁(yè)數(shù)： | 7/11頁(yè) |
| 文件大?。?/td> | 229K |
| 代理商： | IRF1302L |
IRF1302S/IRF1302L
www.irf.com
7
Fig 15.
Typical Avalanche Current Vs.Pulsewidth
Fig 16.
Maximum Avalanche Energy
Vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. P
D (ave)
= Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25°C in Figure 15, 16).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see figure 11)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
I
av
=
2 T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
T/ Z
thJC
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
1
10
100
1000
A
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche
pulsewidth,
assuming
Tj = 25°C due to
avalanche losses
tav
0.01
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
10
60
110
160
210
260
310
360
410
EA
TOP Single Pulse
BOTTOM 10% Duty Cycle
ID = 104A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF1302S | Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A) |
| IRF1302STRL | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 174A I(D) | TO-263AB |
| IRF1302STRR | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 174A I(D) | TO-263AB |
| IRF1310NL | Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A) |
| IRF1310NS | Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF1302PBF | 制造商:International Rectifier 功能描述:MOSFET N 20V 180A TO-220 |
| IRF1302S | 功能描述:MOSFET N-CH 20V 174A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRF1302SHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 20V 174A 3PIN D2PAK - Bulk |
| IRF1302STRL | 制造商:IRF 制造商全稱:International Rectifier 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 174A I(D) | TO-263AB |
| IRF1302STRR | 制造商:IRF 制造商全稱:International Rectifier 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 174A I(D) | TO-263AB |
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