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參數(shù)資料
| 型號： | IRF1302L |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 20V的，的Rds（on）\u003d 4.0mohm，身份證\u003d 174A章） |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 229K |
| 代理商： | IRF1302L |
Parameter
Max.
174
120
700
200
1.4
± 20
350
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
See Fig.12a, 12b, 15, 16
TBD
-55 to + 175
300 (1.6mm from case )
°C
HEXFET
Power MOSFET
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET
Power MOSFET utilizes the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide variety
of other applications.
S
D
G
Absolute Maximum Ratings
V
DSS
= 20V
R
DS(on)
= 4.0m
I
D
= 174A
Description
www.irf.com
1
Benefits
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
●
●
●
●
●
●
AUTOMOTIVE MOSFET
Thermal Resistance
Parameter
Typ.
–––
–––
Max.
0.74
40
Units
°C/W
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)
D
2
Pak
IRF1302S
TO-262
IRF1302L
IRF1302S
IRF1302L
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF1302S | Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A) |
| IRF1302STRL | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 174A I(D) | TO-263AB |
| IRF1302STRR | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 174A I(D) | TO-263AB |
| IRF1310NL | Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A) |
| IRF1310NS | Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF1302PBF | 制造商:International Rectifier 功能描述:MOSFET N 20V 180A TO-220 |
| IRF1302S | 功能描述:MOSFET N-CH 20V 174A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRF1302SHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 20V 174A 3PIN D2PAK - Bulk |
| IRF1302STRL | 制造商:IRF 制造商全稱:International Rectifier 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 174A I(D) | TO-263AB |
| IRF1302STRR | 制造商:IRF 制造商全稱:International Rectifier 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 174A I(D) | TO-263AB |
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