- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385438 > IRF1302STRR (International Rectifier) TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 174A I(D) | TO-263AB PDF資料下載
參數(shù)資料
| 型號： | IRF1302STRR |
| 廠商： | International Rectifier |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 174A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 20V的五（巴西）直| 174A章一（d）|對263AB |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 229K |
| 代理商： | IRF1302STRR |
Parameter
Max.
174
120
700
200
1.4
± 20
350
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
See Fig.12a, 12b, 15, 16
TBD
-55 to + 175
300 (1.6mm from case )
°C
HEXFET
Power MOSFET
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET
Power MOSFET utilizes the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide variety
of other applications.
S
D
G
Absolute Maximum Ratings
V
DSS
= 20V
R
DS(on)
= 4.0m
I
D
= 174A
Description
www.irf.com
1
Benefits
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
●
●
●
●
●
●
AUTOMOTIVE MOSFET
Thermal Resistance
Parameter
Typ.
–––
–––
Max.
0.74
40
Units
°C/W
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)
D
2
Pak
IRF1302S
TO-262
IRF1302L
IRF1302S
IRF1302L
相關PDF資料 |
PDF描述 |
|---|---|
| IRF1310NL | Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A) |
| IRF1310NS | Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A) |
| IRF1310N | Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A) |
| IRF1310S | Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A) |
| IRF1404LPBF | AUTOMOTIVE MOSFET |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF130R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 14A I(D) | TO-204AA |
| IRF130SMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS |
| IRF130SMD05 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel |
| IRF130SMD05N | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS |
| IRF131 | 制造商:. 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。