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參數(shù)資料
| 型號： | IHP10T120 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
| 中文描述： | 低損耗DuoPack：在IGBT的溝槽場終止技術(shù)和軟，恢復快反平行何快恢復二極管 |
| 文件頁數(shù)： | 8/14頁 |
| 文件大?。?/td> | 334K |
| 代理商： | IHP10T120 |
IHP10T120
Soft Switching Series
Power Semiconductors
8
Rev. 2 Jun-04
E
,
S
5A
10A
15A
0,0mJ
2,0mJ
4,0mJ
6,0mJ
E
ts
*
E
off
*)
E
and
E
include losses
due to diode recovery
E
on
*
E
,
S
5
50
R
G
,
GATE RESISTOR
100
150
200
0,0 mJ
0,4 mJ
0,8 mJ
1,2 mJ
1,6 mJ
2,0 mJ
2,4 mJ
2,8 mJ
3,2 mJ
E
ts
*
E
on
*
*)
E
and
E
include losses
due to diode recovery
E
off
I
C
,
COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
J
=150°C,
V
CE
=600V,
V
GE
=0/15V,
R
G
=81
,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
J
=150°C,
V
CE
=600V,
V
GE
=0/15V,
I
C
=8A,
Dynamic test circuit in Figure E)
E
,
S
50°C
100°C
150°C
0,0mJ
0,5mJ
1,0mJ
1,5mJ
2,0mJ
2,5mJ
E
ts
*
E
on
*
*)
E
and
E
include losses
due to diode recovery
E
off
E
,
S
400V
500V
600V
700V
800V
0mJ
1mJ
2mJ
3mJ
E
ts
*
E
on
*
*)
E
and
E
include losses
due to diode recovery
E
off
T
J
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load,
V
CE
=600V, V
GE
=0/15V,
I
C
=8A,
R
G
=81
,
Dynamic test circuit in Figure E)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter voltage
(inductive load,
T
J
=150°C, V
GE
=0/15V,
I
C
=8A,
R
G
=81
,
Dynamic test circuit in Figure E)
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| IHP10T120_07 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
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