參數(shù)資料
型號: IHP10T120
廠商: INFINEON TECHNOLOGIES AG
英文描述: Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述: 低損耗DuoPack:在IGBT的溝槽場終止技術(shù)和軟,恢復(fù)快反平行何快恢復(fù)二極管
文件頁數(shù): 4/14頁
文件大?。?/td> 334K
代理商: IHP10T120
IHP10T120
Soft Switching Series
Power Semiconductors
4
Rev. 2 Jun-04
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
45
24
592
177
0.83
1.19
2.02
-
-
-
-
-
-
-
ns
T
j
=150
°
C,
V
CC
=610V,
I
C
=10A,
V
GE
= 0 /15V,
R
G
= 81
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=180nH,
1)
=39pF
mJ
t
rr
Q
rr
I
rrm
-
-
-
185
630
8.1
-
-
-
ns
nC
A
T
j
=150
°
C
V
R
=800V,
I
F
=4A,
di
F
/dt
=750A/
μ
s
1)
Leakage inductance
L
σ
and Stray capacity
C
σ
due to dynamic test circuit in Figure E.
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