參數(shù)資料
型號： IHP10T120
廠商： INFINEON TECHNOLOGIES AG
英文描述： Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述： 低損耗DuoPack：在IGBT的溝槽場終止技術(shù)和軟，恢復(fù)快反平行何快恢復(fù)二極管
文件頁數(shù)： 10/14頁
文件大小： 334K
代理商： IHP10T120
IHP10T120
Soft Switching Series
Power Semiconductors
10
Rev. 2 Jun-04
Z
t
,
T
10μs
100μs
1ms
10ms
100ms
10
-2
K/W
10
-1
K/W
10
0
K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D
=0.5
Z
t
,
T
10μs
100μs
1ms
10ms
100ms
1
10
-2
K/W
10
-1
K/W
10
0
K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D
=0.5
t
P
,
PULSE WIDTH
t
P
,
PULSE WIDTH
Figure 23. IGBT transient thermal
resistance as a function of pulse width
(
D = t
p
/
T
)
Figure 24. Diode transient thermal
impedance as a function of pulse width
(
D
=
t
P
/
T
)
t
r
,
R
0A/μs
400A/μs
800A/μs
1200A/μ
50ns
100ns
150ns
200ns
250ns
300ns
350ns
400ns
450ns
500ns
4A
I
F
=8A
2A
Q
r
,
R
0A/μs
400A/μs
800A/μs
1200A/
400nC
450nC
500nC
550nC
600nC
650nC
700nC
750nC
800nC
850nC
4A
I
F
=8A
2A
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(
V
R
=600V,
I
F
=8A,
Dynamic test circuit in Figure E)
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 24. Typical reverse recovery charge
as a function of diode current slope
(
V
R
=800V,
T
J
= 125°C,
Dynamic test circuit in Figure E)
R
,(K/W )
0.1759
0.3291
0.2886
0.1189
R
1
τ
,
(s)
8.688*10
-2
1.708*10
-2
1.259*10
-3
1.898*10
-4
C
1
=
τ
1
/
R
1
R
2
C
2
=
τ
2
/
R
2
R
,(K/W )
0.500
0.578
1.036
0.4046
R
1
τ
,
(s)
4.529*10
-2
6.595*10
-3
1.003*10
-3
9.423*10
-5
C
1
=
τ
1
/
R
1
R
2
C
2
=
τ
2
/
R
2
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IHP10T120_07 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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