參數(shù)資料
型號(hào)： IHP10T120
廠商： INFINEON TECHNOLOGIES AG
英文描述： Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述： 低損耗DuoPack：在IGBT的溝槽場(chǎng)終止技術(shù)和軟，恢復(fù)快反平行何快恢復(fù)二極管
文件頁(yè)數(shù)： 6/14頁(yè)
文件大?。?/td> 334K
代理商： IHP10T120
IHP10T120
Soft Switching Series
Power Semiconductors
6
Rev. 2 Jun-04
I
C
,
C
0V
1V
2V
3V
4V
5V
6V
0A
5A
10A
15A
20A
15V
7V
9V
11V
13V
V
GE
=17V
I
C
,
C
0V
1V
2V
3V
4V
5V
6V
0A
5A
10A
15A
20A
15V
7V
9V
11V
13V
V
GE
=17V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristic
(
T
j
= 25°C)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 6. Typical output characteristic
(
T
j
= 150°C)
I
C
,
C
0V
2V
4V
6V
8V
10V
12V
0A
5A
10A
15A
20A
25°C
T
J
=150°C
V
C
C
-
E
-50°C
0°C
50°C
100°C
0,0V
0,5V
1,0V
1,5V
2,0V
2,5V
3,0V
I
C
=8A
I
C
=15A
I
C
=5A
I
C
=2.5A
V
GE
,
GATE-EMITTER
VOLTAGE
Figure 7. Typical transfer characteristic
(V
CE
=20V)
T
J
,
JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(
V
GE
= 15V)
相關(guān)PDF資料
PDF描述
IHW15N120R2 Reverse Conducting IGBT with monolithic body diode
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IHW15T120 IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
IHW20N120R2 Reverse Conducting IGBT with monolithic body diode
IHW20N120R Reverse Conducting IGBT with monolithic body diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IHP10T120_07 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IHP10T120XK 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 16A 3-Pin(3+Tab) TO-220
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IHSH36F1 功能描述:按鈕開(kāi)關(guān) Hall Effect PB IP67 Sealed, Blue RoHS:否 制造商:C&K Components 觸點(diǎn)形式:2 NC - 2 NO 開(kāi)關(guān)功能:ON ? OFF 電流額定值:4 A 電壓額定值 AC:12 V to 250 V 電壓額定值 DC:12 V to 50 V 功率額定值: 安裝風(fēng)格:Through Hole 照明:Illuminated 照明顏色:None IP 等級(jí):IP 40 端接類型:Solder 觸點(diǎn)電鍍:Silver 執(zhí)行器:Square 蓋顏色: 封裝: 可燃性等級(jí):UL 94 V-0
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