參數(shù)資料
型號(hào): HY5S6B6D
廠商: Hynix Semiconductor Inc.
英文描述: 4Banks x1M x 16bits Synchronous DRAM
中文描述: 4Banks x1M x 16位同步DRAM
文件頁(yè)數(shù): 19/27頁(yè)
文件大?。?/td> 368K
代理商: HY5S6B6D
Rev 0.3 / July 2004
19
HY5S6B6D(L/S)F(P)-xE
4Banks x 1M x 16bits Synchronous DRAM
ABSOLUTE MAXIMUM RATING
DC OPERATING CONDITION
(T
A
= -25 to 85
o
C
)
Note :
1. All Voltages are referenced to V
SS
= 0V
2. V
DDQ
must not exceed the level of V
DD
AC OPERATING TEST CONDITION
(T
A
= -25 to 85
o
C
, V
DD =
1.8V, V
SS
= 0V)
Note 1.
Parameter
Symbol
T
A
Rating
-25 ~ 85
Unit
o
C
o
C
V
V
V
mA
W
Ambient Temperature
Storage Temperature
Voltage on Any Pin relative to V
SS
Voltage on V
DD
relative to V
SS
Voltage on V
DDQ
relative to V
SS
Short Circuit Output Current
Power Dissipation
Soldering Temperature
.
Time
T
STG
-55 ~ 125
-1.0 ~ 2.6
-1.0 ~ 2.6
-1.0 ~ 2.6
50
1
260
.
10
V
IN
, V
OUT
V
DD
V
DDQ
I
OS
P
D
T
SOLDER
o
C
.
Sec
Parameter
Symbol
V
DD
V
DDQ
V
IH
V
IL
Min
1.65
1.65
Typ
1.8
1.8
-
-
Max
1.95
1.95
Unit
V
V
V
V
Note
1
1, 2
1, 2
1, 2
Power Supply Voltage
Power Supply Voltage
Input High Voltage
Input Low Voltage
0.8*V
DDQ
-0.3
V
DDQ+
0.3
0.3
Parameter
Symbol
V
IH
/ V
IL
V
trip
t
R
/ t
F
V
outref
CL
Value
Unit
V
V
ns
V
pF
Note
AC Input High/Low Level Voltage
Input Timing Measurement Reference Level Voltage
Input Rise/Fall Time
Output Timing Measurement Reference Level Voltage
Output Load Capacitance for Access Time Measurement
0.9*V
DDQ
/0.2
0.5*V
DDQ
1
0.5*V
DDQ
1
ZO=50
Output
Vtt=0.5xVDDQ
50
30pF
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