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參數(shù)資料
| 型號(hào)： | HY5DU561622FTP-4I |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 16M X 16 DDR DRAM, 0.7 ns, PDSO66 |
| 封裝： | 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 |
| 文件頁數(shù)： | 22/28頁 |
| 文件大小： | 179K |
| 代理商： | HY5DU561622FTP-4I |
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Rev. 1.1 / Mar. 2008
3
1HY5DU561622FTP-5I
HY5DU561622FTP-4I
DESCRIPTION
The Hynix HY5DU561622FTP-5I, -4I series are a 268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM,
ideally suited for the point-to-point applications which requires high bandwidth.
The Hynix 16Mx16 DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the
clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data,
Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are inter-
nally pipelined and 2-bit prefetched to achieve very high bandwidth. All input and output voltage levels are compatible
with SSTL_2.
FEATURES
VDD, VDDQ = 2.5V + / - 0.2V for 200MHz
VDD, VDDQ = 2.6V + 0.1 / -0.2V for 250MHz
All inputs and outputs are compatible with SSTL_2
interface
JEDEC standard 400mil 66pin TSOP-II with 0.65mm
pin pitch
Fully differential clock inputs (CK, /CK) operation
Double data rate interface
Source synchronous - data transaction aligned to
bidirectional data strobe (DQS)
x16 device has 2 bytewide data strobes (LDQS,
UDQS) per each x8 I/O
Data outputs on DQS edges when read (edged DQ)
Data inputs on DQS centers when write (centered
DQ)
Data(DQ) and Write masks(DM) latched on the both
rising and falling edges of the data strobe
All addresses and control inputs except Data, Data
strobes and Data masks latched on the rising edges
of the clock
Write mask byte controls by LDM and UDM
Programmable /CAS latency 3 / 4 supported
Programmable Burst Length 2 / 4 / 8 with both
sequential and interleave mode
Internal 4 bank operations with single pulsed /RAS
tRAS Lock-Out function supported
Auto refresh and self refresh supported
8192 refresh cycles / 64ms
Full, Half and Matched Impedance(Weak) strength
driver option controlled by EMRS
Operation temperature : -40oC to 85oC
ORDERING INFORMATION
Part No.
Power Supply
(VDD, VDDQ)
Clock
Frequency
Max Data
Rate
interface
Temp
Package
HY5DU561622FTP-4I 2.6V + 0.1 / - 0.2V
250MHz
500Mbps/pin
SSTL-2
IT Part
400mil 66pin
TSOP-II
HY5DU561622FTP-5I
2.5V + / - 0.2V
200MHz
400Mbps/pin
相關(guān)PDF資料 |
PDF描述 |
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| HY5DU56422ALF-J | 64M X 4 DDR DRAM, 0.7 ns, PBGA60 |
| HY5MS5B6LF-H | 16M X 16 DDR DRAM, 6.5 ns, PBGA60 |
| HY5PS1G831ALFP-C4 | 128M X 8 DDR DRAM, PBGA68 |
| HY5PS1G831ALFP-Y5 | 128M X 8 DDR DRAM, PBGA68 |
| HY5RS573225AFP-16L | 8M X 32 DDR DRAM, 0.28 ns, PBGA136 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY5DU561622FTP-5 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M(16Mx16) DDR SDRAM |
| HY5DU561622FTP-5I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M(16Mx16) DDR SDRAM |
| HY5DU561622FTP-D43 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mb DDR SDRAM |
| HY5DU561622FTP-D43I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mb DDR SDRAM |
| HY5DU561622FTP-D5 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mb DDR SDRAM |
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