參數(shù)資料
型號(hào): HY5DU561622FTP-4I
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 16M X 16 DDR DRAM, 0.7 ns, PDSO66
封裝: 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
文件頁(yè)數(shù): 15/28頁(yè)
文件大小: 179K
代理商: HY5DU561622FTP-4I
Rev. 1.1 / Mar. 2008
22
1HY5DU561622FTP-5I
HY5DU561622FTP-4I
DC CHARACTERISTICS II (TA=-40 ~ 85oC, Voltage referenced to VSS = 0V)
Parameter
Symbol
Test Condition
Speed
Unit
Note
4
5
Operating Current
IDD1
One bank; Active - Read - Precharge;
Burst Length=4; tRC=tRC(min); tCK=tCK(min);
address and control inputs changing once per clock
cycle; IOUT=0mA
160
150
mA
Precharge Power Down
Standby Current
IDD2P
All banks idle; Power down mode; CKE=Low,
tCK=tCK(min)
20
mA
Idle Standby Current
IDD2N
/CS=High, All banks idle; tCK=tCK(min);
CKE=High; address and control inputs changing
once per clock cycle.
VIN=VREF for DQ, DQS and DM
80
70
mA
Active Power Down
Standby Current
IDD3P
One bank active; Power down mode ; CKE=Low,
tCK=tCK(min)
55
50
mA
Active Standby Current
IDD3N
/CS=HIGH; CKE=HIGH; One bank; Active-
Precharge; tRC=tRAS(max); tCK=tCK(min);
DQ, DM and DQS inputs changing twice per clock
cycle; Address and other control inputs changing
once per clock cycle
90
80
mA
Operating Current
IDD4R
Burst=2;Reads; Continuous burst; One bank active;
Address and control inputs changing once per clock
cycle; tCK=tCK(min); IOUT=0mA
220
200
mA
IDD4W
Burst=2; Writes; Continuous burst; One bank active;
Address and control inputs changing once per clock
cycle; tCK=tCK(min); DQ, DM and DQS inputs
changing twice per clock cycle
220
200
mA
Auto Refresh Current
IDD5
tRC=tRFC(min); All banks active
200
180
mA
Self Refresh Current
IDD6
CKE=<0.2V; External clock on; tCK=tCK(min)
55
mA
相關(guān)PDF資料
PDF描述
HY5DU56422ALF-J 64M X 4 DDR DRAM, 0.7 ns, PBGA60
HY5MS5B6LF-H 16M X 16 DDR DRAM, 6.5 ns, PBGA60
HY5PS1G831ALFP-C4 128M X 8 DDR DRAM, PBGA68
HY5PS1G831ALFP-Y5 128M X 8 DDR DRAM, PBGA68
HY5RS573225AFP-16L 8M X 32 DDR DRAM, 0.28 ns, PBGA136
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY5DU561622FTP-5 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M(16Mx16) DDR SDRAM
HY5DU561622FTP-5I 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M(16Mx16) DDR SDRAM
HY5DU561622FTP-D43 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mb DDR SDRAM
HY5DU561622FTP-D43I 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mb DDR SDRAM
HY5DU561622FTP-D5 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mb DDR SDRAM