參數(shù)資料
型號(hào): HY27US081G1MTCS
廠商: HYNIX SEMICONDUCTOR INC
元件分類: PROM
英文描述: 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48
封裝: 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48
文件頁數(shù): 9/39頁
文件大小: 312K
代理商: HY27US081G1MTCS
Rev 0.2 / May. 2007
17
Preliminary
HY27US(08/16)1G1M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Parameter
Symbol
Test Conditions
3.3Volt
Unit
Min
Typ
Max
Operating
Current
Sequential
Read
ICC1
tRC=50ns
CE=VIL,
IOUT=0mA
-10
20
mA
Program
ICC2
-
10
20
mA
Erase
ICC3
-
10
20
mA
Stand-by Current (TTL)
ICC4
CE=VIH,
WP=PRE=0V/Vcc
-1
mA
Stand-by Current (CMOS)
ICC5
CE=Vcc-0.2,
WP=PRE=0V/Vcc
-10
50
uA
Input Leakage Current
ILI
VIN=0 to Vcc (max)
-
±
10
uA
Output Leakage Current
ILO
VOUT =0 to Vcc (max)
-
±
10
uA
Input High Voltage
VIH
-
0.8 x Vcc
-
Vcc+0.3
V
Input Low Voltage
VIL
-
-0.3
-
0.2xVcc
V
Output High Voltage Level
VOH
IOH=-400uA
2.4
-
V
Output Low Voltage Leve
VOL
IOL=2.1mA
-
0.4
V
Output Low Current (R/B)
IOL
(R/B)
VOL=0.4V
8
10
-
mA
Table 8: DC and Operating Characteristics
Parameter
Value
3.3Volt
Input Pulse Levels
0.4V to 2.4V
Input Rise and Fall Times
5ns
Input and Output Timing Levels
1.5V
Output Load (2.7V - 3.3V)
1 TTL GATE and CL=50pF
Output Load (3.0V - 3.6V)
1 TTL GATE and CL=100pF
Table 9: AC Conditions
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