- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄223992 > HY27US081G1MTCS (HYNIX SEMICONDUCTOR INC) 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48 PDF資料下載
參數(shù)資料
| 型號： | HY27US081G1MTCS |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | PROM |
| 英文描述： | 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48 |
| 封裝： | 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48 |
| 文件頁數(shù)： | 11/39頁 |
| 文件大?。?/td> | 312K |
| 代理商： | HY27US081G1MTCS |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁當(dāng)前第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁
Rev 0.2 / May. 2007
19
Preliminary
HY27US(08/16)1G1M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Parameter
Symbol
3.3Volt
Unit
Min
Max
CLE Setup time
tCLS
0ns
CLE Hold time
tCLH
10
ns
CE setup time
tCS
0ns
CE hold time
tCH
10
ns
WE pulse width
tWP
25(1)
ns
ALE setup time
tALS
0ns
ALE hold time
tALH
10
ns
Data setup time
tDS
20
ns
Data hold time
tDH
10
ns
Write Cycle time
tWC
50
ns
WE High hold time
tWH
15
ns
Data Transfer from Cell to register
tR
15
us
ALE to RE Delay
tAR
10
ns
CLE to RE Delay
tCLR
10
ns
Ready to RE Low
tRR
20
ns
RE Pulse Width
tRP
25
ns
WE High to Busy
tWB
100
ns
Read Cycle Time
tRC
50
ns
RE Access Time
tREA
30
ns
RE High to Output High Z
tRHZ
30
ns
CE High to Output High Z
tCHZ
20
ns
RE or CE high to Output hold
tOH
10
ns
RE High Hold Time
tREH
15
ns
Output High Z to RE low
tIR
0ns
CE Access Time
tCEA
45
ns
WE High to RE low
tWHR
60
ns
Last RE High to busy (at sequential read)
tRB
100
ns
CE High to Ready (in case of interception by CE at read)
tCRY
60+tr(R/B#)(4)
ns
CE High Hold Time (at the last serial read)(3)
tCEH
100
ns
Device Resetting Time (Read / Program / Erase)
tRST
5/10/500(2)
us
Write Protection time
tWW(5)
100
ns
Table 12: AC Timing Characteristics
NOTE:
1. If tCS is less than 10ns tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
2. If Reset Command (FFh) is written at Ready state, the device goes into Busy for maximum 5us
3. To break the sequential read cycle, CE must be held for longer time than tCEH.
4. The time to Ready depends on the value of the pull-up resistor tied R/B# pin.ting time.
5. Program / Erase Enable Operation : WP high to WE High.
Program / Erase Disable Operation : WP Low to WE High.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY27US081G1MTPMP | 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48 |
| HY5116100BJ-70 | 16M X 1 FAST PAGE DRAM, 70 ns, PDSO24 |
| HY5116804CSLT-80 | 2M X 8 EDO DRAM, 80 ns, PDSO28 |
| HY514400ALT-60 | 1M X 4 FAST PAGE DRAM, 60 ns, PDSO20 |
| HY51VS65173HGLT-5 | 4M X 16 EDO DRAM, 50 ns, PDSO50 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY27US08281A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory |
| HY27US08282A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory |
| HY27US08561A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| HY27US08561A-T (P) | 制造商:SK Hynix Inc 功能描述: |
| HY27US08561M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。