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參數(shù)資料
| 型號： | HY27US081G1MSES |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | PROM |
| 英文描述： | 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48 |
| 封裝： | 12 X 17 MM, 0.65 MM PITCH, USOP1-48 |
| 文件頁數(shù)： | 38/39頁 |
| 文件大?。?/td> | 312K |
| 代理商： | HY27US081G1MSES |
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Rev 0.2 / May. 2007
8
Preliminary
HY27US(08/16)1G1M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
IO0
IO1
IO2
IO3
IO4
IO5
IO6
IO7
1st Cycle
A0
A1
A2
A3
A4
A5
A6
A7
2nd Cycle
A9
A10
A11
A12
A13
A14
A15
A16
3rd Cycle
A17
A18
A19
A20
A21
A22
A23
A24
4th Cycle
A25
A26
L(1)
Table 3: Address Cycle Map(x8)
NOTE:
1. L must be set to Low.
2. A8 is set to LOW or High by the 00h or 01h Command.
IO0
IO1
IO2
IO3
IO4
IO5
IO6
IO7
IO8-IO15
1st Cycle
A0
A1
A2
A3
A4
A5
A6
A7
L(1)
2nd Cycle
A9
A10
A11
A12
A13
A14
A15
A16
L(1)
3rd Cycle
A17
A18
A19
A20
A21
A22
A23
A24
L(1)
4th Cycle
A25
A26
L(1)
Table 4: Address Cycle Map(x16)
NOTE:
1. L must be set to Low.
FUNCTION
1st CYCLE
2nd CYCLE
3rd CYCLE
4th CYCLE
Acceptable command
during busy
READ 1
00h/01h
-
READ 2
50h
-
READ ID
90h
-
RESET
FFh
-
Yes
PAGE PROGRAM
80h
10h
-
COPY BACK PGM
00h
8Ah
10h
BLOCK ERASE
60h
D0h
-
READ STATUS REGISTER
70h
-
Yes
Table 5: Command Set
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PDF描述 |
|---|---|
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| HY5116100BJ-70 | 16M X 1 FAST PAGE DRAM, 70 ns, PDSO24 |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HY27US08281A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory |
| HY27US08282A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory |
| HY27US08561A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| HY27US08561A-T (P) | 制造商:SK Hynix Inc 功能描述: |
| HY27US08561M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
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