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參數(shù)資料
| 型號： | HY27UF081G2M-TES |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| 中文描述： | 128M X 8 FLASH 3.3V PROM, 30 ns, PDSO48 |
| 封裝： | 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48 |
| 文件頁數(shù)： | 17/48頁 |
| 文件大?。?/td> | 476K |
| 代理商： | HY27UF081G2M-TES |
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Rev 0.7 / Apr. 2005
17
Preliminary
HY27UF(08/ 16)1G2M Series
HY27SF(08/ 16)1G2M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Parameter
Symbol
Min
Typ
Max
Unit
Valid Block Number
N
VB
1004
1024
Blocks
Table 7: Valid Blocks Number
Symbol
Parameter
Value
Unit
1.8V
3.3V
T
A
Ambient Operating Temperature
(Commercial Temperature Range)
0 to 70
0 to 70
℃
Ambient Operating Temperature
(Extended Temperature Range)
-25 to 85
-25 to 85
℃
Ambient Operating Temperature
(Industrial Temperature Range)
-40 to 85
-40 to 85
℃
T
BIAS
Temperature Under Bias
-50 to 125
-50 to 125
℃
T
STG
Storage Temperature
-65 to 150
-65 to 150
℃
V
IO
(2)
Input or Output Voltage
-0.6 to 2.7
-0.6 to 4.6
V
Vcc
Supply Voltage
-0.6 to 2.7
-0.6 to 4.6
V
Table 8: Absolute maximum ratings
NOTE:
1. Except for the rating “Operating Temperature Range”, stresses above those listed in the Table “Absolute
Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of
the device at these or any other conditions above those indicated in the Operating sections of this specification is
not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
2. Minimum Voltage may undershoot to -2V during transition and for less than 20ns during transitions.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY27UF081G2M-TIB | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UF081G2M-TIP | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UF081G2M-TIS | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UF081G2M-TMB | Inductor; Inductor Type:Power; Inductance:2uH; Inductance Tolerance: 25 %; Series:CTX; Package/Case:PCB Surface Mount; Core Material:Amorphous Metal; Current, lt rms Parallel:7.26A; Current, lt rms Series:3.63A RoHS Compliant: Yes |
| HY27UF081G2M-TMP | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY27UF081G2M-TIB | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UF081G2M-TIP | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UF081G2M-TIS | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UF081G2M-TMB | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UF081G2M-TMP | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
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