參數(shù)資料
型號: HN58V1001
廠商: Hitachi,Ltd.
英文描述: 1M EEPROM (128-kword ×8-bit)(1M EEPROM (128k字 ×8位))
中文描述: 100萬的EEPROM(128 KWord的× 8位)(1米的EEPROM(128K的字× 8位))
文件頁數(shù): 3/24頁
文件大?。?/td> 181K
代理商: HN58V1001
HN58V1001 Series
3
Block Diagram
V
V
OE
CE
WE
A6
A0
to
A7
to
A16
CC
SS
I/O0
I/O7
High voltage generator
Control logic and timing
Y decoder
X decoder
Address
buffer and
latch
I/O buffer
and
input latch
Y gating
Memory array
Data latch
RES
RDY/
Busy
RES
to
Operation Table
Operation
CE
OE
WE
RES
RDY/
Busy
I/O
Read
V
IL
V
IH
V
IL
V
IL
×
×
V
IL
×
*
2
V
IH
×
V
H
*
1
×
High-Z
Dout
Standby
High-Z
High-Z
Write
V
IH
V
IH
×
V
IL
V
IH
V
IH
×
V
H
V
H
×
×
High-Z to V
OL
High-Z
Din
Deselect
High-Z
Write Inhibit
V
IL
V
IL
×
Data
Polling
V
IL
×
V
IH
×
V
H
V
IL
V
OL
High-Z
Dout (I/O7)
Program reset
Notes: 1. Refer to the recommended DC operating conditions.
2.
×
: Don’t care
High-Z
相關(guān)PDF資料
PDF描述
HN58V256AI 256 k EEPROM (32-kword ×8-bit)(256k EEPROM (32k字 ×8位))
HN58V256A 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)
HN58V256AFP-12 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)
HN58V256AT-12 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)
HN58V257AT-12 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)
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