參數(shù)資料
型號(hào): HN58V256AFP-12
廠商: Hitachi,Ltd.
英文描述: 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)
中文描述: 256k的EEPROM(32 KWord的× 8位)就緒/忙和RES功能(HN58V257A)
文件頁(yè)數(shù): 1/24頁(yè)
文件大小: 118K
代理商: HN58V256AFP-12
HN58V256A Series
HN58V257A Series
256k EEPROM (32-kword
×
8-bit)
Ready/
Busy
and
RES
function (HN58V257A)
ADE-203-357D (Z)
Rev. 4.0
Oct. 24, 1997
Description
The Hitachi HN58V256A and HN58V257A are electrically erasable and programmable ROMs organized as
32768-word
×
8-bit. They have realized high speed, low power consumption and high reliability by
employing advanced MNOS memory technology and CMOS process and circuitry technology. They also
have a 64-byte page programming function to make their write operations faster.
Features
Single 3 V supply: 2.7 to 5.5 V
Access time: 120 ns max
Power dissipation:
Active: 20 mW/MHz, (typ)
Standby: 110 μW (max)
On-chip latches: address, data,
CE
,
OE
,
WE
Automatic byte write: 10 ms max
Automatic page write (64 bytes): 10 ms max
Ready/
Busy
(only the HN58V257A series)
Data
polling and Toggle bit
Data protection circuit on power on/off
Conforms to JEDEC byte-wide standard
Reliable CMOS with MNOS cell technology
10
5
erase/write cycles (in page mode)
10 years data retention
Software data protection
Write protection by
RES
pin (only the HN58V257A series)
Industrial versions (Temperature range: – 20 to 85C and – 40 to 85C) are also available.
相關(guān)PDF資料
PDF描述
HN58V256AT-12 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)
HN58V257AT-12 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)
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