- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄223875 > HB52R649E1U-A6B (ELPIDA MEMORY INC) 64M X 72 SYNCHRONOUS DRAM MODULE, 6.9 ns, DMA168 PDF資料下載
參數(shù)資料
| 型號： | HB52R649E1U-A6B |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 64M X 72 SYNCHRONOUS DRAM MODULE, 6.9 ns, DMA168 |
| 封裝： | DIMM-168 |
| 文件頁數(shù)： | 8/20頁 |
| 文件大?。?/td> | 151K |
| 代理商： | HB52R649E1U-A6B |
EOL
Product
HB52R649E1U-A6B/B6B
Preliminary Data Sheet E0022H10
16
AC Characteristics (Ta = 0 to 55°C, V
CC = 3.3 V ± 0.3 V, VSS = 0 V) (cont)
HB52R649E1U
-A6B/B6B
Parameter
Symbol
PC100
Symbol
Min
Max
Unit
Notes
Command setup time
t
CS
Tsi
2.6
—
ns
1
Command hold time
t
CH
Thi
1.6
—
ns
1
Ref/Active to Ref/Active command period t
RC
Trc
70
—
ns
1
Active to precharge command period
t
RAS
Tras
50
120000
ns
1
Active command to column command
(same bank)
t
RCD
Trcd
20
—
ns
1
Precharge to active command period
t
RP
Trp
20
—
ns
1
Write recovery or data-in to precharge
lead time
t
DPL
Tdpl
10
—
ns
1
Active (a) to Active (b) command period
t
RRD
Trrd
20
—
ns
1
Transition time (rise to fall)
t
T
15ns
Refresh period
t
REF
—
64
ms
Notes: 1. AC measurement assumes t
T = 1 ns.
Reference level for timing of input signals is 1.5 V.
2. Access time is measured at 1.5 V. Load condition is C
L = 50 pF.
3. t
LZ (max) defines the time at which the outputs achieves the low impedance state.
4. t
HZ (max) defines the time at which the outputs achieves the high impedance state.
5. t
CES defines CKE setup time to CK rising edge except power down exit command.
Test Conditions
Input and output timing reference levels: 1.5 V
Input waveform and output load: See following figures
t
T
2.4 V
0.4 V
0.8 V
2.0 V
input
t
T
DQ
CL
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HB56R864ES-7B | 8M X 64 FAST PAGE DRAM MODULE, 70 ns, DMA168 |
| HB601R | SINGLE COLOR LED, BLUE, 1.7 mm |
| HBCD-050-06.00-SBL-STR | INTERCONNECTION DEVICE |
| HBCD-050-06.00-SBL-TEU | INTERCONNECTION DEVICE |
| HBCD-050-06.00-SBR-SBR | INTERCONNECTION DEVICE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52R649E1U-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC100 SDRAM |
| HB52RD168DB-A6F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52RD168DB-A6FL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52RD168DB-B6F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52RD168DB-B6FL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。