參數(shù)資料
型號: HB52R649E1U-A6B
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 64M X 72 SYNCHRONOUS DRAM MODULE, 6.9 ns, DMA168
封裝: DIMM-168
文件頁數(shù): 12/20頁
文件大?。?/td> 151K
代理商: HB52R649E1U-A6B
EOL
Product
HB52R649E1U-A6B/B6B
Preliminary Data Sheet E0022H10
2
Burst read/write operation and burst read/single write operation capability
Programmable burst length: 1/2/4/8
2 variations of burst sequence
Sequential
Interleave
Programmable CE latency
: 3/4 (HB52R649E1U-A6B)
: 4 (HB52R649E1U-B6B)
Byte control by DQMB
Refresh cycles: 8192 refresh cycles/64 ms
2 variations of refresh
Auto refresh
Self refresh
Ordering Information
Type No.
Frequency
CE latency
Package
Contact pad
HB52R649E1U-A6B
100 MHz
3/4
168-pin dual lead out socket type
Gold
HB52R649E1U-B6B
100 MHz
4
Pin Arrangement
1 pin 10 pin 11 pin
40 pin 41 pin
84 pin
85 pin 94 pin 95 pin 124 pin 125 pin
168 pin
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HB52R649E1U-B6B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC100 SDRAM
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