參數(shù)資料
型號(hào): GS881E18T-V
廠商: GSI TECHNOLOGY
英文描述: 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
中文描述: 為512k × 18,256K × 32,256K × 36 9Mb以上同步突發(fā)靜態(tài)存儲(chǔ)器
文件頁(yè)數(shù): 5/36頁(yè)
文件大小: 771K
代理商: GS881E18T-V
TQFP Pin Description
Symbol
A
0
, A
1
A
DQ
A
DQ
B
DQ
C
DQ
D
NC
BW
B
A
, B
B,
B
C
, B
D
NC
CK
GW
E
2
E
1
G
ADV
ADSP, ADSC
ZZ
TMS
TDI
TDO
TCK
FT
LBO
V
DD
V
SS
V
DDQ
Type
I
I
Description
Address field LSBs and Address Counter preset Inputs
Address Inputs
I/O
Data Input and Output pins
I
I
I
I
I
I
I
I
I
I
I
I
O
I
I
I
No Connect
Byte Write
Writes all enabled bytes; active low
Byte Write Enable for DQ Data I/Os; active low
No Connect
Clock Input Signal; active high
Global Write Enable
Writes all bytes; active low
Chip Enable; active high
Chip Enable; active low
Output Enable; active low
Burst address counter advance enable; active low
Address Strobe (Processor, Cache Controller); active low
Sleep Mode control; active high
Scan Test Mode Select
Scan Test Data In
Scan Test Data Out
Scan Test Clock
Flow Through or Pipeline mode; active low
Linear Burst Order mode; active low
I
Core power supply
I
I/O and Core Ground
I
Output driver power supply
GS881E18/32/36B(T/D)-xxxV
Rev: 1.00 6/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
5/36
2006, GSI Technology
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