參數(shù)資料
型號: GS881E18T-V
廠商: GSI TECHNOLOGY
英文描述: 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
中文描述: 為512k × 18,256K × 32,256K × 36 9Mb以上同步突發(fā)靜態(tài)存儲器
文件頁數(shù): 15/36頁
文件大小: 771K
代理商: GS881E18T-V
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
CR
R
CW
CR
CR
W
CW
W
CW
Notes:
1.
2.
The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
3.
GS881E18/32/36B(T/D)-xxxV
Rev: 1.00 6/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
15/36
2006, GSI Technology
Simplified State Diagram with G
相關(guān)PDF資料
PDF描述
GS881E32BD-150IV 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E18BD-150IV 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E18BD-150V 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E18BD-200IV 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E18BD-200V 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
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