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參數(shù)資料
| 型號(hào)： | GS76024AB-10 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 256K x 24 6Mb Asynchronous SRAM |
| 中文描述： | 256K X 24 STANDARD SRAM, 10 ns, PBGA119 |
| 封裝： | 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 |
| 文件頁(yè)數(shù)： | 7/12頁(yè) |
| 文件大小： | 471K |
| 代理商： | GS76024AB-10 |
t
AA
t
RC
Address
t
AC
t
LZ
t
OE
t
OLZ
CE
OE
Data Out
t
HZ
t
OHZ
Data valid
High impedance
GS76024AB
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02 12/2005
7/12
2003, GSI Technology
Read Cycle 2: WE = V
IH
Write Cycle
Parameter
Symbol
-8
-10
-12
Unit
Min
Max
Min
Max
Min
Max
Write cycle time
tWC
8
—
10
—
12
—
ns
Address valid to end of write
tAW
5.5
—
7
—
8
—
ns
Chip enable to end of write
tCW
5.5
—
7
—
8
—
ns
Byte enable to end of write
tBW
5.5
—
7
—
8
—
ns
Data set up time
tDW
4
—
4.5
—
6
—
ns
Data hold time
tDH
0
—
0
—
0
—
ns
Write pulse width
tWP
5.5
—
7
—
8
—
ns
Address set up time
tAS
0
—
0
—
0
—
ns
Write recovery time (WE)
tWR
0
—
0
—
0
—
ns
Write recovery time (CE)
tWR1
0
—
0
—
0
—
ns
Output Low Z from end of write
tWLZ
*
3
—
3
—
3
—
ns
Write to output in High Z
tWHZ
*
—
3.5
—
4
—
5
ns
* These parameters are sampled and are not 100% tested.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS76024AB-10I | 制造商:GSI Technology 功能描述:SRAM ASYNC SGL 3.3V 6MBIT 256KX24 10NS 119FBGA - Trays |
| GS76024AB-12 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 24 6Mb Asynchronous SRAM |
| GS76024AB-12I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 24 6Mb Asynchronous SRAM |
| GS76024AB-8 | 制造商:GSI Technology 功能描述:SRAM ASYNC SGL 3.3V 6MBIT 256KX24 8NS 119FBGA - Trays |
| GS76024AB-8I | 制造商:GSI Technology 功能描述:SRAM ASYNC SGL 3.3V 6MBIT 256KX24 8NS 119FBGA - Trays |
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