參數(shù)資料
型號(hào): GS76024AB-10
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 256K x 24 6Mb Asynchronous SRAM
中文描述: 256K X 24 STANDARD SRAM, 10 ns, PBGA119
封裝: 14 X 22 MM, 1.27 MM PITCH, FPBGA-119
文件頁數(shù): 3/12頁
文件大?。?/td> 471K
代理商: GS76024AB-10
Truth Table
CE
OE
WE
Mode
DQ0 to DQ23
V
DD
Current
H
X
X
Not selected
High Z
ISB1, ISB2
L
L
H
Read
Data Out
I
DD
L
X
L
Write
Data In
L
H
H
Output disable
High Z
GS76024AB
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02 12/2005
3/12
2003, GSI Technology
Note:
X: “H” or “L”
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
V
DD
–0.5 to +4.6
V
Input Voltage
V
IN
–0.5 to V
DD
+0.5
(
4.6 V max.)
V
Output Voltage
V
OUT
–0.5 to V
DD
+0.5
(
4.6 V max.)
V
Allowable BGA power dissipation
PD
1.5
W
Storage temperature
T
STG
–55 to 150
o
C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage for -8/10/12
V
DD
3.0
3.3
3.6
V
Input High Voltage
V
IH
2.0
V
DD
+0.3
V
Input Low Voltage
V
IL
–0.3
0.8
V
Ambient Temperature,
Commercial Range
T
Ac
0
70
o
C
Ambient Temperature,
Industrial Range
T
Ai
–40
85
o
C
Notes:
1.
2.
Input overshoot voltage should be less than V
DD
+2 V and not exceed 20 ns.
Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
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