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參數(shù)資料
| 型號(hào)： | EBD21RD4ADNA-6B-E |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 2GB Registered DDR SDRAM DIMM (256M words X72 bits, 2 Ranks) |
| 中文描述： | 256M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 |
| 封裝： | LEAD FREE, DIMM-184 |
| 文件頁(yè)數(shù)： | 14/19頁(yè) |
| 文件大?。?/td> | 201K |
| 代理商： | EBD21RD4ADNA-6B-E |
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EBD21RD4ADNA-E
Data Sheet E0606E10 (Ver. 1.0)
14
12. VDD is assumed to be 2.5V ± 0.2V. VDD power supply variation per cycle expected to be less than
0.4V/400 cycle.
13. tDAL = (tWR/tCK)+(tRP/tCK)
For each of the terms above, if not already an integer, round to the next highest integer.
Example: For –7A Speed at CL = 2.5, tCK = 7.5ns, tWR = 15ns and tRP= 20ns,
tDAL = (15ns/7.5ns) + (20ns/7.5ns) = (2) + (3)
tDAL = 5 clocks
Timing Parameter Measured in Clock Cycle for Registered DIMM
Number of clock cycle
tCK
6ns
7.5ns
Parameter
Symbol
min.
max.
min.
max.
Unit
Write to pre-charge command delay (same bank) tWPD
4 + BL/2
—
3 + BL/2
—
tCK
Read to pre-charge command delay (same bank) tRPD
BL/2
—
BL/2
—
tCK
Write to read command delay (to input all data)
tWRD
2 + BL/2
—
2 + BL/2
—
tCK
Burst stop command to write command delay
(CL = 3)
tBSTW
—
—
2
—
tCK
(CL = 3.5)
tBSTW
3
—
3
—
tCK
Burst stop command to DQ High-Z
(CL = 3)
tBSTZ
—
—
3
3
tCK
(CL = 3.5)
tBSTZ
3.5
3.5
3.5
3.5
tCK
Read command to write command delay
(to output all data)
(CL = 3)
tRWD
—
—
2 + BL/2
—
tCK
(CL = 3.5)
tRWD
3 + BL/2
—
3 + BL/2
—
tCK
Pre-charge command to High-Z
(CL = 3)
tHZP
—
—
3
3
tCK
(CL = 3.5)
tHZP
3.5
3.5
3.5
3.5
tCK
Write command to data in latency
tWCD
2
—
2
—
tCK
Write recovery
tWR
2
—
1
—
tCK
Register set command to active or register set
command
tMRD
2
—
2
—
tCK
Self refresh exit to non-read command
tSNR
12
—
10
—
tCK
Self refresh exit to read command
tSRD
200
—
200
—
tCK
Power down entry
tPDEN
1
1
1
1
tCK
Power down exit to command input
tPDEX
1
—
1
—
tCK
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| EBD21RD4ADNA-7A-E | 2GB Registered DDR SDRAM DIMM (256M words X72 bits, 2 Ranks) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EBD21RD4ADNA-7A | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2GB Registered DDR SDRAM DIMM (256M words X72 bits, 2 Ranks) |
| EBD21RD4ADNA-7A-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2GB Registered DDR SDRAM DIMM (256M words X72 bits, 2 Ranks) |
| EBD21RD4ADNA-7B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2GB Registered DDR SDRAM DIMM (256M words X72 bits, 2 Ranks) |
| EBD21RD4ADNA-7B-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2GB Registered DDR SDRAM DIMM (256M words X72 bits, 2 Ranks) |
| EBD21RD4ADNA-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2GB Registered DDR SDRAM DIMM (256M words X72 bits, 2 Ranks) |
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