- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384272 > EBD10RD4ADFA-7A (ELPIDA MEMORY INC) RES MFLM 2K 0.1W 5% SMT0805 PDF資料下載
參數(shù)資料
| 型號： | EBD10RD4ADFA-7A |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | RES MFLM 2K 0.1W 5% SMT0805 |
| 中文描述： | 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
| 封裝： | DIMM-184 |
| 文件頁數(shù)： | 11/19頁 |
| 文件大小： | 219K |
| 代理商： | EBD10RD4ADFA-7A |
EBD10RD4ADFA
Data Sheet E0430E20 (Ver. 2.0)
11
DC Characteristics 1 (TA = 0 to +70°C, VDD = 2.5V ± 0.2V, VSS = 0V)
Parameter
Symbol
Grade
max.
Unit
Test condition
Notes
Operating current (ACTV-PRE)
IDD0
-6B
-7A, -7B
3165
2830
mA
CKE
≥
VIH,
tRC = tRC (min.)
CKE
≥
VIH, BL = 4,
CL = 3.5,
tRC = tRC (min.)
1, 2, 9
Operating current
(ACTV-READ-PRE)
IDD1
-6B
-7A, -7B
3885
3460
mA
1, 2, 5
Idle power down standby current
IDD2P
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
520
454
1005
850
825
760
825
760
1635
1390
4605
4000
4605
4000
6225
5800
538
472
9285
7780
mA
CKE
≤
VIL
4
Floating idle standby current
IDD2F
mA
≥
VIH, /CS
≥
VIH,
CKE
≥
VIH, /CS
≥
VIH,
CKE
Quiet idle standby current
IDD2Q
mA
Active power down
standby current
IDD3P
mA
CKE
≤
VIL
3
Active standby current
IDD3N
mA
CKE
≥
VIH, /CS
≥
VIH
tRAS = tRAS (max.)
CKE
≥
VIH, BL = 2,
CL = 3.5
CKE
≥
VIH, BL = 2,
CL = 3.5
tRFC = tRFC (min.),
Input
≤
VIL or
≥
VIH
Input
≥
VDD – 0.2 V
Input
≤
0.2 V
3, 5, 6
Operating current
(Burst read operation)
Operating current
(Burst write operation)
IDD4R
mA
1, 2, 5, 6
IDD4W
mA
1, 2, 5, 6
Auto refresh current
IDD5
mA
Self refresh current
IDD6
mA
Operating current
(4 banks interleaving)
Notes. 1. These IDD data are measured under condition that DQ pins are not connected.
2. One bank operation.
3. One bank active.
4. All banks idle.
5. Command/Address transition once per one cycle.
6. DQ, DM, DQS transition twice per one cycle.
7. 4 banks active. Only one bank is running at tRC = tRC (min.)
8. The IDD data on this table are measured with regard to tCK = tCK (min.) in general.
9. Command/Address transition once every two clock cycles.
10. Command/Address stable at
≥
VIH or
≤
VIL.
IDD7A
mA
BL = 4
1,
5, 6, 7
DC Characteristics 2 (TA = 0 to +70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS = 0V)
(DDR SDRAM Component Specification)
Parameter
Symbol
min.
max.
Unit
Test condition
Notes
Input leakage current
ILI
–2
2
μA
VDD
≥
VIN
≥
VSS
Output leakage current
ILO
–5
5
μA
VDDQ
≥
VOUT
≥
VSS
Output high current
IOH
–15.2
—
mA
VOUT = 1.95V
Output low current
IOL
15.2
—
mA
VOUT = 0.35V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EBD10RD4ADFA | 1GB Registered DDR SDRAM DIMM (128M words x72 bits, 1 Rank) |
| EBD10RD4ADFA-6B | 1GB Registered DDR SDRAM DIMM (128M words x72 bits, 1 Rank) |
| EBD10RD4ADFA-7B | 1GB Registered DDR SDRAM DIMM (128M words x72 bits, 1 Rank) |
| EBD10RD4ADFA-7B-E | 1GB Registered DDR SDRAM DIMM (128M words x72 bits, 1 Rank) |
| EBD10RD4ADFA-E | 1GB Registered DDR SDRAM DIMM (128M words x72 bits, 1 Rank) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EBD10RD4ADFA-7A-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Registered DDR SDRAM DIMM (128M words x72 bits, 1 Rank) |
| EBD10RD4ADFA-7B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Registered DDR SDRAM DIMM (128M words x72 bits, 1 Rank) |
| EBD10RD4ADFA-7B-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Registered DDR SDRAM DIMM (128M words x72 bits, 1 Rank) |
| EBD10RD4ADFA-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Registered DDR SDRAM DIMM (128M words x72 bits, 1 Rank) |
| EBD11ED8ABFA | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Unbuffered DDR SDRAM DIMM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。