型號(hào) | 廠商 | 描述 |
s8383-1024s 2 3 4 5 6 |
Hamamatsu Photonics | NMOS multichannel detector head |
s8383-512s 2 3 4 5 6 |
Hamamatsu Photonics | NMOS multichannel detector head |
s8385-04 2 |
Hamamatsu Photonics | Si PIN photodiode |
s8385 2 |
Hamamatsu Photonics | Diode; High speed switching; VR (V): 30; IF (mA): -; Pd (mW): 250; rf (ohm) max: -; Condition IF at rf (mA): -; Condition f at rf (MHz): -; VF (V) max: 0.8; Condition IF at VF (mA): 10; C (pF) max: 3; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: DO-35 |
s8729 2 |
Hamamatsu Photonics | Si PIN photodiode |
s8729-04 2 |
Hamamatsu Photonics | Si PIN photodiode |
s8729-10 2 |
Hamamatsu Photonics | Si PIN photodiode |
s8543 2 |
Hamamatsu Photonics | One-dimensional PSD Long, narrow active area and surface mountable package |
s8551 2 |
Hamamatsu Photonics | Photodiodes for VUV (Vacuum UV) detection |
s8552 2 |
Hamamatsu Photonics | Photodiodes for VUV (Vacuum UV) detection |
s8553 2 |
Hamamatsu Photonics | Photodiodes for VUV (Vacuum UV) detection |
s8558 2 |
Hamamatsu Photonics | Surface mountable 16-element photodiode array |
s8559 2 |
Hamamatsu Photonics | Si photodiode Detector for X-ray monitor |
s8594 2 |
Hamamatsu Photonics | Quadrant photodiode with slit mask for encoder |
s8611 2 3 4 |
Hamamatsu Photonics | Si APD Low bias operation, for 800 nm band |
s8627-01a 2 |
Hamamatsu Photonics | Transmitter/receiver photo IC for optical link |
s8650 2 |
Hamamatsu Photonics | Si PIN photodiode Flat surface ideal for bonding to scintillator |
s8658-01 2 3 4 5 6 7 |
Hamamatsu Photonics | Front-illuminated FFT-CCD for X-ray imaging |
s8664-30k 2 3 |
Hamamatsu Photonics | Short wavelength type APD |
s8664 2 3 |
Hamamatsu Photonics | Short wavelength type APD |
s8664-02k 2 3 |
Hamamatsu Photonics | Short wavelength type APD |
s8664-05k 2 3 |
Hamamatsu Photonics | Short wavelength type APD |
s8664-1010 2 3 |
Hamamatsu Photonics | Short wavelength type APD |
s8664-10k 2 3 |
Hamamatsu Photonics | Diode; High speed switching; VR (V): 80; IF (mA): -; Pd (mW): -; rf (ohm) max: -; Condition IF at rf (mA): -; Condition f at rf (MHz): -; VF (V) max: 1.2; Condition IF at VF (mA): 100; C (pF) max: 2; Condition VR at C (V): 0; Condition f at C (MHz): 1; Package: SFP |
s8664-20k 2 3 |
Hamamatsu Photonics | Short wavelength type APD |
s8664-50k 2 3 |
Hamamatsu Photonics | Short wavelength type APD |
s8664-55 2 3 |
Hamamatsu Photonics | Short wavelength type APD |
s8665-0909 2 3 4 5 6 7 8 9 |
Hamamatsu Photonics | CCD area image sensor Four-stage thermoelectric cooled, back-thinned FFT-CCD |
s8673 2 |
Hamamatsu Photonics | One-dimensional PSD using SIP (Single Inline Package) |
s8703 2 3 |
Hamamatsu Photonics | Si PIN photodiode Dual-element, plastic package photodiode |
s8745-01 2 3 4 5 |
Hamamatsu Photonics | Photodiode and preamp integrated with feedback resistance and capacitance |
s8746-01 2 3 4 5 |
Hamamatsu Photonics | Photodiode and preamp integrated with feedback resistance and capacitance |
s8844-0909 2 3 4 5 6 7 8 9 |
Hamamatsu Photonics | CCD area image sensor 512 】 512 pixels, Back-thinned FFT-CCD |
s8865-256 2 3 4 5 6 |
Hamamatsu Photonics | Photodiode array combined with signal processing circuit chip |
s8865-256g 2 3 4 5 6 |
Hamamatsu Photonics | Photodiode array combined with signal processing circuit chip |
s8865 2 3 4 5 6 |
Hamamatsu Photonics | Photodiode array combined with signal processing circuit chip |
s8865-128 2 3 4 5 6 |
Hamamatsu Photonics | Diode; High speed switching; VR (V): 75; IF (mA): -; Pd (mW): -; rf (ohm) max: -; Condition IF at rf (mA): -; Condition f at rf (MHz): -; VF (V) max: 1; Condition IF at VF (mA): 10; C (pF) max: 4; Condition VR at C (V): 0; Condition f at C (MHz): 1; Package: MHD |
s8865-64 2 3 4 5 6 |
Hamamatsu Photonics | Photodiode array combined with signal processing circuit chip |
s8890 2 3 |
Hamamatsu Photonics | Long wavelength type APD |
s8890-02 2 3 |
Hamamatsu Photonics | Long wavelength type APD |
s8890-05 2 3 |
Hamamatsu Photonics | Long wavelength type APD |
s8890-10 2 3 |
Hamamatsu Photonics | Long wavelength type APD |
s8890-15 2 3 |
Hamamatsu Photonics | Long wavelength type APD |
s8890-30 2 3 |
Hamamatsu Photonics | Long wavelength type APD |
s8980 2 3 4 5 6 7 |
Hamamatsu Photonics | Front-illuminated FFT-CCDs for X-ray imaging |
s8981-02 2 3 4 5 6 7 |
Hamamatsu Photonics | Front-illuminated FFT-CCDs for X-ray imaging |
s8982 2 3 4 5 6 7 |
Hamamatsu Photonics | CCD area image sensor Front-illuminated FFT-CCDs for X-ray imaging |
s8984 2 3 4 5 6 7 |
Hamamatsu Photonics | CCD area image sensor Front-illuminated FFT-CCDs for X-ray imaging |
s8985-02 2 3 4 5 6 7 |
Hamamatsu Photonics | CCD area image sensor Front-illuminated FFT-CCDs for X-ray imaging |
s8b-eh 2 3 4 5 6 |
Electronic Theatre Controls, Inc. | Disconnectable Crimp style connectors |