參數(shù)資料
型號: S8865-256G
廠商: Hamamatsu Photonics
英文描述: Photodiode array combined with signal processing circuit chip
中文描述: 光電二極管陣列結(jié)合信號處理集成電路芯片
文件頁數(shù): 3/6頁
文件大?。?/td> 100K
代理商: S8865-256G
Photodiode array with amplifier
S8865-256, S8865-256G
I
Electrical/optical characteristics
[Ta=25
°
C, Vdd=5 V, V (CLK)=V (RESET)=5 V, Vgain=5 V (High gain), 0 V (Low gain)]
Parameter
Symbol
Min.
Spectral response range
λ
Peak sensitivity wavelength
λ
p
-
High gain
-
Dark output
voltage *
6
Low gain
-
Saturation output voltage
Vsat
3
High gain
-
Saturation
exposure *
7
Low gain
-
High gain
-
Photo
sensitivity
Low gain
-
Photo response non-uniformity *
8
PRNU
-
High gain
-
Noise *
9
Low gain
-
Output offset voltage *
10
Vos
-
Typ.
Max.
Unit
nm
nm
200 to 1000
720
0.002
0.001
3.5
15
30
250
125
-
0.6
0.3
Vref
-
0.02
0.01
-
-
-
-
-
±10
-
-
-
Vd
mV
V
Esat
m
lx
·
s
S
V/
lx
·
s
%
N
mVrms
V
*6: Integration time ts=1 ms
*7: Measured with a 2856 K tungsten lamp
*8: When the photodiode array is exposed to uniform light which is 50 % of the saturation exposure, the Photo Response Non-
Uniformity (PRNU) is defined as follows:
PRNU =
X/X
×
100 (%)
where X is the average output of all elements and
X is the difference between the maximum and minimum outputs.
*9: Measured with a video data rate of 50 kHz and Ts=1 ms in dark state
*10: Video output is negative-going output with respect to the output offset voltage.
OUTPUT OFFSET
VOLTAGE
Vref=4.5 V Typ.
SATURATION
STATE
DARK STATE
SATURATION OUTPUT
VOLTAGE
Vsat=3.5 V Typ.
1 V Typ.
GND
0.5
0.4
0.3
0.2
0.1
0200
400
600
800
WAVELENGTH (nm)
1000
1200
P
(Ta=25 C)
1
4
RESET
EXTSP
Vms
Vdd
GND
CLK
Vref
Vgain
Vpd
2
10
11
12
5
6
7
TIMING GENERATOR
SHIFT REGISTER
HOLD CIRCUIT
CHARGE AMP ARRAY
PHOTODIODE ARRAY
3
TRIG
8
EOS
9
Video
1
2
3
4
5
N-1
N
KMPDC0152EA
KMPDB0220EA
KMPDC0153EA
I
Spectral response (measurement example)
I
Block diagram
I
Output waveform of one element
3
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