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參數(shù)資料
| 型號： | BUK9735-55A |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 20A I(D) | TO-220F |
| 中文描述： | 晶體管| MOSFET的| N溝道| 55V的五（巴西）直| 20A條（?。﹟至220F |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 317K |
| 代理商： | BUK9735-55A |
Philips Semiconductors
BUK9735-55A
TrenchMOS logic level FET
Product specification
Rev. 01 — 15 February 2001
6 of 13
9397 750 07999
Philips Electronics N.V. 2001. All rights reserved.
Source-drain diode
V
SD
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
I
S
= 15 A; V
GS
= 0 V;
Figure 15
I
S
= 20 A;dI
S
/dt =
100 A/
μ
s
V
GS
=
10 V; V
DS
= 30 V
0.95
1.2
V
t
rr
Q
r
36
70
ns
nC
Table 5:
T
j
= 25
°
C unless otherwise specified
Symbol
Parameter
Characteristics
…continued
Conditions
Min
Typ
Max
Unit
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C; I
D
= 20 A
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03na96
0
20
40
60
80
100
0
2
4
6
8
10
VDS (V)
ID
2.2
3
4
5
6
7
VGS (V) = 10
9
8
03na94
20
25
30
35
40
45
50
55
60
2
4
6
8
10
VGS (V)
RDSon
(m
)
03na97
20
25
30
35
40
45
50
55
60
65
70
0
20
40
60
80
ID (A)
RDSon
(m
)
VGS (V) = 3 3.2 3.4 3.6 3.8
4
5
03nc24
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
a
-60
-20
20
60
100
140
Tj (oC)
180
a
R
DSon 25 C
°
)
---------------------------
=
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