參數(shù)資料
型號: BUK9735-55A
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 20A I(D) | TO-220F
中文描述: 晶體管| MOSFET的| N溝道| 55V的五(巴西)直| 20A條(?。﹟至220F
文件頁數(shù): 2/13頁
文件大小: 317K
代理商: BUK9735-55A
Philips Semiconductors
BUK9735-55A
TrenchMOS logic level FET
Product specification
Rev. 01 — 15 February 2001
2 of 13
9397 750 07999
Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
[1]
I
DM
is limited by chip, not package.
Table 2:
Symbol Parameter
V
DS
drain-source voltage (DC)
I
D
drain current (DC)
P
tot
total power dissipation
T
j
junction temperature
R
DSon
drain-source on-state resistance
Quick reference data
Conditions
Typ
29
Max
55
20
25
150
35
37
Unit
V
A
W
°
C
m
m
T
mb
= 25
°
C; V
GS
= 5 V
T
mb
= 25
°
C
T
j
= 25
°
C; V
GS
= 5 V; I
D
= 20 A
T
j
= 25
°
C; V
GS
= 4.5 V; I
D
= 20 A
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
V
GSM
non-repetitive gate-source voltage
I
D
drain current (DC)
Limiting values
Conditions
Min
Max
55
55
±
10
±
15
20
Unit
V
V
V
V
A
R
GS
= 20 k
t
p
50
μ
s
T
mb
= 25
°
C; V
GS
= 5 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 5 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
14
79
A
A
I
DM
peak drain current
[1]
P
tot
T
stg
T
j
Source-drain diode
I
DR
reverse drain current (DC)
I
DRM
pulsed reverse drain current
Avalanche ruggedness
W
DSS
non-repetitive avalanche energy
total power dissipation
storage temperature
operating junction temperature
55
55
25
+150
+150
W
°
C
°
C
T
mb
= 25
°
C
T
mb
= 25
°
C; pulsed; t
p
10
μ
s
20
79
A
A
unclamped inductive load; I
D
= 20 A;
V
DS
55 V; V
GS
= 5 V; R
GS
= 50
;
starting T
j
= 25
°
C
123
mJ
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