參數(shù)資料
型號： BUK1M200-50SDLD
廠商： NXP SEMICONDUCTORS
元件分類： 外設及接口
英文描述： Quad channel TOPFET
中文描述： 1.3 A 4 CHANNEL, BUF OR INV BASED PRPHL DRVR, PDSO20
封裝： 7.50 MM, PLASTIC, MS-013, SOT163-1, SO-20
文件頁數(shù)： 7/14頁
文件大?。?/td> 302K
代理商： BUK1M200-50SDLD
Philips Semiconductors
BUK1M200-50SDLD
Quad channel TOPFET
Product data
Rev. 01 — 02 April 2003
7 of 14
9397 750 10956
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
[4]
The TOPFET switches off to protect itself when one of the overload thresholds is exceeded. It remains latched off until reset by the
input.
Power threshold for protection to operate.
To reset the latched state, the input-source voltage is reduced from 5 V to 1 V.
Trip time t
(trip)
varies with overload dissipation P
OV
according to the formula t
(trip)
= t
d(sc)
/ [P
OV
/ P
OV(th)
- 1]
[5]
[6]
[7]
T
j
= 25
°
C; I
D
= 100 mA; t
p
= 300
μ
s
Fig 5.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
Fig 6.
Drain-source on-state resistance as a function
of input-source voltage; typical values.
T
j
= 25
°
C; t
p
= 300
μ
s
Fig 7.
Output characteristics; drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C; V
DS
= 10 V; t
p
= 300
μ
s
Fig 8.
Transfer characteristics; drain current as a
function of input-source voltage; typical values.
03pa71
0
0.5
1
1.5
2
2.5
-50
0
50
100
150
Tj (
°
C)
a
03pa73
0
125
250
375
500
0
2
4
6
8
VIS (V)
RDSon
(m
)
a
R
DSon 25
°
C
)
-----------------------------
=
03pa74
0
0.4
0.8
1.2
1.6
0
10
20
30
VDS (V)
ID
(A)
V
IS
= 7 V
6 V
5 V
4 V
03pa75
0
0.6
1.2
1.8
0
2
4
6
8
VIS (V)
ID
(A)
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相關代理商/技術參數(shù)
參數(shù)描述
BUK1M200-50SDLD,11 功能描述:MOSFET BUK1M200-50SDLD/SO20/REEL7// RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK1M200-50SDLD,115 制造商:NXP Semiconductors 功能描述:
BUK1M200-50SDLD,51 功能描述:MOSFET QUAD CHANNEL TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK1M200-50SDLDT/R 功能描述:MOSFET TOPFET MULTICHAN FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK1M200-50SGTD 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Quad channel logic level TOPFET
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