參數(shù)資料
型號(hào)： BUK1M200-50SDLD
廠商： NXP SEMICONDUCTORS
元件分類： 外設(shè)及接口
英文描述： Quad channel TOPFET
中文描述： 1.3 A 4 CHANNEL, BUF OR INV BASED PRPHL DRVR, PDSO20
封裝： 7.50 MM, PLASTIC, MS-013, SOT163-1, SO-20
文件頁(yè)數(shù)： 6/14頁(yè)
文件大小： 302K
代理商： BUK1M200-50SDLD
Philips Semiconductors
BUK1M200-50SDLD
Quad channel TOPFET
Product data
Rev. 01 — 02 April 2003
6 of 14
9397 750 10956
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
6.
Static characteristics
[1]
[2]
[3]
The supply for the logic and overload protection is taken from the input.
The input voltage below which the overload protection circuits will be reset.
Not directly measurable from the device terminals.
Table 5:
Limits are valid for
40
°
C
≤
T
sp
≤
+150
°
C and typical values for T
sp
= 25
°
C unless otherwise specified.
Symbol
Parameter
Conditions
Off-state output characteristics
V
DS(CL)
drain-source clamping voltage
V
IS
= 0 V; I
D
= 10 mA
V
IS
= 0 V; I
D
= 200 mA; t
p
≤
300
μ
s;
δ ≤
0.01;
Figure 16
I
DSS
drain-source leakage current
V
IS
= 0 V; V
DS
= 40 V
T
sp
= 25
°
C;
Figure 17
On-state output characteristic
R
DSon
drain-source on-state resistance
V
IS
≥
4 V; t
p
≤
300
μ
s;
δ ≤
0.01;
I
D
= 100 mA;
Figure 5
and
6
T
sp
= 25
°
C
Input characteristics
[1]
V
IS(th)
input-source threshold voltage
V
DS
= 5 V; I
D
= 1 mA
T
sp
= 25 C;
Figure 10
I
IS
input-source current
normal operation
V
IS
= 5 V
V
IS
= 4 V
protection latched
V
IS
= 5 V
V
IS
= 3 V;
Figure 11
and
12
V
IS(rst)
input-source reset voltage
t
rst
≥
100
μ
s;
Figure 15
t
rst(latch)
latch reset time
V
IS(CL)
input-source clamping voltage
I
I
= 1.5 mA;
Figure 16
R
IG
input-gate resistance
Overload protection characteristic
[4]
I
D(lim)
drain current limiting
V
IS
= 5 V;
Figure 18
V
IS
= 4.5 V
4 V
≤
V
IS
≤
5.5 V;
Short circuit load protection characteristics
P
OV(th)
overload power threshold
V
IS
= 5 V
T
d(sc)
short circuit response time
V
IS
= 5 V;
Figure 14
Overtemperature protection characteristic
T
j(th)
threshold junction temperature
4 V
≤
V
IS
≤
5.5 V; I
D
≥
280 mA or
V
DS
≥
100 mV;
Figure 9
Source-drain diode characteristic
V
SD
source-drain (diode forward)
voltage
Static characteristics
Min
Typ
Max
Unit
50
50
-
62
-
70
V
V
-
-
-
0.05
100
10
μ
A
μ
A
-
-
380
m
-
150
200
m
0.6
1.1
-
1.6
2.4
2.1
V
V
100
80
220
195
400
330
μ
A
μ
A
200
130
1.5
10
5.5
-
400
250
2
40
-
33
650
430
2.9
100
8.5
-
μ
A
μ
A
V
μ
s
V
k
[2]
[6]
[3]
0.8
0.7
0.6
1.3
-
-
1.7
-
1.8
A
A
A
[5]
-
-
17
1.6
-
-
W
ms
[7]
150
165
-
°
C
I
S
= 2 A; V
IS
= 0 V; t
p
= 300
μ
s
-
0.83
1.1
V
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