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參數(shù)資料
| 型號： | BUK1M200-50SDLD |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設及接口 |
| 英文描述： | Quad channel TOPFET |
| 中文描述： | 1.3 A 4 CHANNEL, BUF OR INV BASED PRPHL DRVR, PDSO20 |
| 封裝： | 7.50 MM, PLASTIC, MS-013, SOT163-1, SO-20 |
| 文件頁數(shù)： | 4/14頁 |
| 文件大?。?/td> | 302K |
| 代理商： | BUK1M200-50SDLD |
Philips Semiconductors
BUK1M200-50SDLD
Quad channel TOPFET
Product data
Rev. 01 — 02 April 2003
4 of 14
9397 750 10956
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
4.
Limiting values
[1]
[2]
[3]
[4]
[5]
[6]
Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
For all devices active.
Not in an overload condition with drain current limiting.
At a drain-source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
Single active device.
With the protection supply provided via the input pin, the TOPFET is protected from short circuit loads. Overload protection operates by
means of drain current limiting and by activating the overtemperature protection.
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
DS
drain-source voltage
I
I
input current
P
tot
total power dissipation
I
IMS
non-repetitive peak input current
T
stg
storage temperature
T
j
junction temperature
Overvoltage clamping
[4]
E
DS(CL)S
non-repetitive drain-source
clamping energy
E
DS(CL)R
repetitive drain-source clamping
energy
Overload protection
[6]
V
DS(prot)
protected drain-source voltage
Reverse diode
I
S
source (diode forward) current
Electrostatic discharge
V
esd
electrostatic discharge voltage
Limiting values
Conditions
Min
-
-
-
-
55
-
Max
50
3
9.4
10
+150
150
Unit
V
mA
W
mA
°
C
°
C
[1]
clamping
T
sp
≤
25
°
C;
Figure 4
t
p
≤
1 ms
[2]
normal operation
[3]
T
amb
= 25
°
C; I
DM
≤
I
D(lim)
(refer to
Table 5
);
inductive load
T
sp
≤
125
°
C; I
DM
= 50 mA; f = 250 Hz
[5]
-
100
mJ
[5]
-
5
mJ
V
IS
≥
4 V
-
35
V
T
sp
≤
25
°
C; V
IS
= 0 V
-
2
A
C = 250 pF; R = 1.5 k
-
2
kV
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| BUK1M200-50SDLD,115 | 制造商:NXP Semiconductors 功能描述: |
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| BUK1M200-50SDLDT/R | 功能描述:MOSFET TOPFET MULTICHAN FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK1M200-50SGTD | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Quad channel logic level TOPFET |
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