參數(shù)資料
型號: BUK212-50Y
廠商: NXP SEMICONDUCTORS
元件分類: 外設(shè)及接口
英文描述: Single channel high-side TOPFET⑩
中文描述: 25 A BUF OR INV BASED PRPHL DRVR, PZFM5
封裝: SOT-263B, TO-220, 5 PIN
文件頁數(shù): 1/16頁
文件大小: 413K
代理商: BUK212-50Y
BUK212-50Y; BUK217-50Y
Single channel high-side TOPFET
Rev. 01 — 17 March 2003
Product data
1.
Product profile
1.1 Description
Monolithic temperature and overload protected single high-side power switch based
on TOPFET Trench technology in a 5-pin surface mount or leadform plastic
package.
Product availability:
BUK212-50Y in SOT263B-01
BUK217-50Y in SOT426 (D
2
-PAK).
1.2 Features
1.3 Applications
1.4 Quick reference data
I
Very low quiescent current
I
Power TrenchMOS
I
Overtemperature protection
I
Over and undervoltage protection
I
Reverse battery protection
I
Low charge pump noise
I
Loss of ground protection
I
CMOS logic capability
I
Negative load clamping
I
Overload protection
I
ESD protection for all pins
I
Diagnostic status indication
I
Operating voltage down to 5.5 V
I
Current limitation.
I
12 V and 24 V grounded loads
I
Inductive loads
I
High inrush current loads
I
Replacement for relays and fuses.
Table 1:
Symbol
R
BLon
I
L
I
L(nom)
I
L(lim)
V
BG(oper)
Quick reference data
Parameter
battery-load on-state resistance
load current
nominal load current (ISO)
self-limiting load current
battery-ground operating voltage
Min
-
-
25
47
5.5
Max
14
44
-
100
35
Unit
m
A
A
A
V
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參數(shù)描述
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