參數(shù)資料
型號: BUK212-50Y
廠商: NXP SEMICONDUCTORS
元件分類: 外設(shè)及接口
英文描述: Single channel high-side TOPFET⑩
中文描述: 25 A BUF OR INV BASED PRPHL DRVR, PZFM5
封裝: SOT-263B, TO-220, 5 PIN
文件頁數(shù): 6/16頁
文件大?。?/td> 413K
代理商: BUK212-50Y
Philips Semiconductors
BUK212-50Y; BUK217-50Y
Single channel high-side TOPFET
Product data
Rev. 01 — 17 March 2003
6 of 16
9397 750 10768
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
[1]
[2]
[3]
[4]
For a high-side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.
This is the current drawn from the supply when the input is LOW, and includes leakage current to the load.
Defined as in ISO 10483-1. For comparison purposes only.
The supply and input voltages for the R
BLon
tests are continuous. The specified pulse duration is t
p
= 300
μ
s, and refers only to the
applied load current.
R
G
is a resistor incorporated internally in the package.
9 V
V
BG
16 V
9 V
V
BG
35 V. A low current load can be detected in the on-state.
Undervoltage sensor causes the device to switch off and reset.
Overvoltage sensor causes the device to switch off to protect the load.
[10] See
Table 3 “Truth table”
[11] 5.5 V
V
BG
35 V
[12] The battery-to-load threshold voltage for short circuit is approximately proportional to the battery supply voltage.
[13] After cooling below the reset temperature the switch will resume normal operation.
[14] The status output is an open drain transistor and requires an external pull-up circuit to indicate a logic HIGH.
[5]
[6]
[7]
[8]
[9]
Undervoltage
[10]
V
BG(uv)
V
BG(uv)(hys)
battery-ground undervoltage
hysteresis
Overvoltage
[10]
V
BG(ov)
battery-ground overvoltage
V
BG(ov)(hys)
battery-ground overvoltage
hysteresis
Overload protection
[10]
I
L(lim)
self-limiting load current
Short circuit load protection
V
BL(off)
battery-load turn-off voltage
battery-ground undervoltage
[8]
2
-
4.2
0.5
5.5
-
V
V
[9]
35
-
45
1
50
-
V
V
V
BG
9 V; V
BL
= V
BG
;
Figure 8
[11]
47
74
100
A
[10][11]
V
BG
= 16 V;
Figure 11
V
BG
= 35 V
[12]
8
15
10
20
12
25
V
V
Overtemperature protection
[10][11]
T
j(th)
threshold junction temperature
T
j(th)(hys)
threshold junction temperature
hysteresis
Status
[6][10]
V
SG(CL)
status-ground clamping voltage
V
SG(L)
status-ground low voltage
[13]
150
-
170
10
190
-
°
C
°
C
I
S
= 100
μ
A
I
S
= 100
μ
A;
Figure 7
T
mb
=
40
°
C
T
mb
= 25
°
C
V
SG
= 5 V
T
mb
= 150
°
C
T
mb
= 25
°
C
connected externally; V
SG
= 5 V
5.5
7
8.5
V
-
-
-
0.7
1
0.8
V
V
I
S(off)
status leakage current
-
-
-
-
0.1
47
15
1
-
μ
A
μ
A
k
R
S
status resistor
[14]
Table 6:
Limits are valid for
40
°
C
T
mb
+150
°
C and typical values for T
mb
= 25
°
C unless otherwise specified.
Symbol
Parameter
Conditions
Static characteristics
…continued
Min
Typ
Max
Unit
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