參數(shù)資料
型號： BUK127-50GT
廠商： NXP SEMICONDUCTORS
元件分類： 外設(shè)及接口
英文描述： PowerMOS transistor Logic level TOPFET
中文描述： BUF OR INV BASED PRPHL DRVR, PDSO4
封裝： PLASTIC, SC-73, SOT-223, 4 PIN
文件頁數(shù)： 2/7頁
文件大?。?/td> 53K
代理商： BUK127-50GT
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK127-50GT
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
I
D
I
D
I
I
I
IRM
P
D
T
stg
T
j
Continuous drain source voltage
1
Drain current
2
Continuous drain current
Continuous input current
Non-repetitive peak input current
Total power dissipation
Storage temperature
Continuous junction temperature
-
-
T
a
= 25C
clamping
t
p
≤
1 ms
T
a
= 25 C
-
normal operation
3
-
-
-
-
-
-
50
V
A
A
current trip
2.1
3
10
1.8
150
150
mA
mA
W
C
C
-55
-
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
voltage
Human body model;
C = 250 pF; R = 1.5 k
-
2
kV
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
E
DSM
Non-repetitive clamping energy
T
a
≤
25 C; I
DM
≤
I
D(TO)
;
inductive load
T
sp
≤
125 C; I
DM
= 1 A;
f = 250 Hz
-
100
mJ
E
DRM
Repetitive clamping energy
-
5
mJ
OVERLOAD PROTECTION LIMITING VALUES
With the protection supply provided via the input pin, TOPFET can protect itself from short circuit loads.
Overload protection operates by means of drain current trip or by activating the overtemperature protection.
SYMBOL
PARAMETER
REQUIRED CONDITION
MIN.
MAX.
UNIT
V
DDP
Protected drain source supply voltage
V
IS
≥
4 V
-
35
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Thermal resistance
Junction to solder point
Junction to board
4
Junction to ambient
R
th j-sp
R
th j-b
R
th j-a
-
-
-
12
40
-
18
-
70
K/W
K/W
K/W
Mounted on any PCB
Mounted on PCB of fig. 4
1
Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2
Refer to OVERLOAD PROTECTION CHARACTERISTICS.
3 Not
in an overload condition with drain current limiting.
4
Temperature measured 1.3 mm from tab.
December 2001
2
Rev 2.000
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK127-50GT T/R 功能描述:MOSFET TAPE-7 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK127-50GT,115 功能描述:MOSFET TAPE-7 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK128-50DL 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level TOPFET SMD version of BUK117-50DL
BUK128-50DL /T3 功能描述:MOSFET TAPE13 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK128-50DL,118 功能描述:MOSFET TAPE13 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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