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參數資料
| 型號： | BLV193 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-171A, 6 PIN |
| 文件頁數： | 6/14頁 |
| 文件大?。?/td> | 108K |
| 代理商： | BLV193 |
March 1993
6
Philips Semiconductors
Product specification
UHF power transistor
BLV193
APPLICATION INFORMATION
RF performance at T
h
= 25
°
C in a common emitter test circuit; R
th j-mb
= 0.4 K/W.
Note
1.
2-tone measurement, f
p
= 900 MHz, f
q
= 901 MHz.
MODE OF OPERATION
f
(MHz)
V
CE
(V)
I
CQ
(A)
P
L
(W)
G
P
(dB)
η
c
(%)
d
im
(dB)
(note
1
)
c.w. class-AB
900
12.5
0.01
12
≥
6.5
typ. 7.5
typ. 11
>
50
typ. 60
c.w. class-A
900
12
1.3
6 (PEP)
typ.
30
Fig.7
Gain and efficiency as functions of load
power, typical values.
Class-AB operation; V
CE
= 12.5 V; f = 900 MHz;
I
CQ
= 10 mA.
handbook, halfpage
Gp
(dB)
MRA555
0
2
4
6
8
0
20
40
60
80
100
η
C
(%)
0
4
8
Gp
12
PL (W)16
η
C
Ruggedness in class-AB operation
The BLV193 is capable of withstanding a load mismatch
corresponding to VSWR = 10:1 through all phases under
the following conditions:
V
CE
= 15.5 V, f = 900 MHz,
T
h
= 25
°
C, R
th j-mb
= 0.4 K/W, and
rated output power.
Fig.8
Load power as a function of drive power,
typical values.
Class-AB operation; V
CE
= 12.5 V; f = 900 MHz;
I
CQ
= 10 mA.
handbook, halfpage
PL
(W)
MRA551
0
4
8
12
0
1
2
PD (W)
3
4
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相關代理商/技術參數 |
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|---|---|
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