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參數(shù)資料
| 型號(hào)： | BLV193 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-171A, 6 PIN |
| 文件頁(yè)數(shù)： | 2/14頁(yè) |
| 文件大小： | 108K |
| 代理商： | BLV193 |
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March 1993
2
Philips Semiconductors
Product specification
UHF power transistor
BLV193
FEATURES
Emitter ballasting resistors for an
optimum temperature profile
Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial transistor
intended for common emitter class-A
and class-AB operation in the
900 MHz communications band.
The transistor has a SOT171 flange
envelope with a ceramic cap. All
leads are isolated from the mounting
base.
PINNING - SOT171
PIN
DESCRIPTION
1
2
3
4
5
6
emitter
emitter
base
collector
emitter
emitter
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common emitter test circuit.
Note
1.
2-tone measurement, f
p
= 900 MHz, f
q
= 901 MHz.
PIN CONFIGURATION
MODE OF
OPERATION
f
(MHz)
V
CE
(V)
P
L
(W)
G
p
(dB)
η
C
(%)
d
im
(dB)
(note
1
)
c.w. class-AB
c.w. class-A
900
900
12.5
12
12
6 (PEP)
≥
6.5
typ. 11
≥
50
typ.
30
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
handbook, halfpage
e
c
b
MBB012
Fig.1 Simplified outline and symbol.
halfpage
MBA931 - 1
1
3
5
2
4
6
Top view
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