- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄11205 > ADUC7126BSTZ126IRL (Analog Devices Inc)IC MCU 16/32B 126KB FLASH 80LQFP PDF資料下載
參數(shù)資料
| 型號： | ADUC7126BSTZ126IRL |
| 廠商： | Analog Devices Inc |
| 文件頁數(shù)： | 48/108頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC MCU 16/32B 126KB FLASH 80LQFP |
| 標(biāo)準(zhǔn)包裝： | 1,000 |
| 系列： | MicroConverter® ADuC7xxx |
| 核心處理器： | ARM7 |
| 芯體尺寸： | 16/32-位 |
| 速度： | 41.78MHz |
| 連通性： | EBI/EMI，I²C，SPI，UART/USART |
| 外圍設(shè)備： | POR，PWM，WDT |
| 輸入/輸出數(shù)： | 40 |
| 程序存儲器容量： | 126KB（63K x 16） |
| 程序存儲器類型： | 閃存 |
| RAM 容量： | 32K x 8 |
| 電壓 - 電源 (Vcc/Vdd)： | 2.7 V ~ 3.6 V |
| 數(shù)據(jù)轉(zhuǎn)換器： | A/D 12x12b，D/A 4x12b |
| 振蕩器型： | 內(nèi)部 |
| 工作溫度： | -40°C ~ 125°C |
| 封裝/外殼： | 80-LQFP |
| 包裝： | 帶卷 (TR) |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁當(dāng)前第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁第103頁第104頁第105頁第106頁第107頁第108頁
ADuC7124/ADuC7126
Data Sheet
Rev. C | Page 44 of 108
NONVOLATILE FLASH/EE MEMORY
The ADuC7124/ADuC7126 incorporate Flash/EE memory
technology on-chip to provide the user with nonvolatile, in-
circuit reprogrammable memory space.
Like EEPROM, flash memory can be programmed in-system
at a byte level, although it must first be erased. The erase is
performed in page blocks. As a result, flash memory is often
and more correctly referred to as Flash/EE memory.
Overall, Flash/EE memory represents a step closer to the
ideal memory device that includes nonvolatility, in-circuit
programmability, high density, and low cost. Incorporated in
the ADuC7124/ADuC7126, Flash/EE memory technology allows
the user to update program code space in-circuit, without the
need to replace one-time programmable (OTP) devices at
remote operating nodes.
Flash/EE Memory
The ADuC7124/ADuC7126 contain two 64 kB arrays of Flash/EE
memory. In the first block, the lower 62 kB is available to the
user, and the upper 2 kB of this Flash/EE program memory
array contain permanently embedded firmware, allowing in-circuit
serial download. The 2 kB of embedded firmware also contain a
power-on configuration routine that downloads factory cali-
brated coefficients to the various calibrated peripherals (band
gap references and so on). This 2 kB embedded firmware is
hidden from user code. It is not possible for the user to read, write,
or erase this page. In the second block, all 64 kB of Flash/EE
memory are available to the user.
The 126 kB of Flash/EE memory can be programmed in-circuit,
using the serial download mode or the JTAG mode provided.
Flash/EE Memory Reliability
The Flash/EE memory arrays on the parts are fully qualified for
two key Flash/EE memory characteristics: Flash/EE memory
cycling endurance and Flash/EE memory data retention.
Endurance quantifies the ability of the Flash/EE memory to be
cycled through many program, read, and erase cycles. A single
endurance cycle is composed of four independent, sequential
events, defined as
1.
Initial page erase sequence.
2.
Read/verify sequence (single Flash/EE).
3.
Byte program sequence memory.
4.
Second read/verify sequence (endurance cycle).
In reliability qualification, every half word (16-bit wide)
location of the three pages (top, middle, and bottom) in the
Flash/EE memory is cycled 10,000 times from 0x0000 to
0xFFFF. As indicated in Table 1, the Flash/EE memory
endurance qualification is carried out in accordance with
JEDEC Retention Lifetime Specification A117 over the
industrial temperature range of 40° to +125°C. The results
allow the specification of a minimum endurance figure over a
supply temperature of 10,000 cycles.
Retention quantifies the ability of the Flash/EE memory to
retain its programmed data over time. Again, the parts are
qualified in accordance with the formal JEDEC Retention
Lifetime Specification (A117) at a specific junction temperature
(TJ = 85°C). As part of this qualification procedure, the Flash/EE
memory is cycled to its specified endurance limit (see the
Flash/EE Memory section) before data retention is character-
ized. This means that the Flash/EE memory is guaranteed to
retain its data for its fully specified retention lifetime every time
the Flash/EE memory is reprogrammed. In addition, note that
retention lifetime, based on the activation energy of 0.6 eV,
150
300
450
600
30
40
55
70
85
100
125
135
150
RE
T
E
NT
IO
N
(
Y
ea
rs
)
0
09
123
-08
5
JUNCTION TEMPERATURE (°C)
Figure 39. Flash/EE Memory Data Retention
PROGRAMMING
The 62 kB of Flash/EE memory can be programmed in-circuit,
using the serial download mode or the provided JTAG mode.
Serial Downloading (In-Circuit Programming)
The ADuC7124/ADuC7126 facilitate code download via the
standard UART serial port. It is only available on UART0
(P01.0 & P1.1). The parts enter serial download mode after
a reset or power cycle if the BM pin is pulled low through
an external 1 kΩ resistor. When in serial download mode,
the user can download code to the full 126 kB of Flash/EE
memory while the device is in-circuit in its target application
hardware. An executable PC serial download is provided as
part of the development system for serial downloading via
the UART. The AN-724 application note describes the UART
download protocol.
Downloading (In-Circuit Programming) via I2C
The ADuC7126BSTZ126I and ADuC7126BSTZ126IRL models
facilitate code download via the the I2C port. The models enter
download mode after a reset or power cycle if the BM pin is
pulled low through an external 1 kΩ resistor and Flash Address
0x80014 = 0xFFFFFFFF. Once in download mode, the user can
download code to the full 126 kB of Flash/EE memory while the
device is in-circuit in its target application hardware. An executable
PC I2C download is provided as part of the development system
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT91SAM7S256C-MU-999 | IC MCU ARM7 256KB FLASH 64-VQFN |
| AT90USB1287-MUR | MCU AVR 128K FLASH 16MHZ 64QFN |
| AT90USB1287-AUR | MCU AVR 128K FLASH 16MHZ 64TQFP |
| VE-BTF-IX | CONVERTER MOD DC/DC 72V 75W |
| VI-B3X-IX-F2 | CONVERTER MOD DC/DC 5.2V 75W |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ADUC7126BSTZ126-RL | 功能描述:IC MCU 16/32B 126KB FLASH 80LQFP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:MicroConverter® ADuC7xxx 標(biāo)準(zhǔn)包裝:38 系列:Encore!® XP® 核心處理器:eZ8 芯體尺寸:8-位 速度:5MHz 連通性:IrDA，UART/USART 外圍設(shè)備:欠壓檢測/復(fù)位，LED，POR，PWM，WDT 輸入/輸出數(shù):16 程序存儲器容量:4KB（4K x 8） 程序存儲器類型:閃存 EEPROM 大小:- RAM 容量:1K x 8 電壓 - 電源 (Vcc/Vdd):2.7 V ~ 3.6 V 數(shù)據(jù)轉(zhuǎn)換器:- 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 105°C 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 包裝:管件 其它名稱:269-4116Z8F0413SH005EG-ND |
| ADUC7128 | 制造商:AD 制造商全稱:Analog Devices 功能描述:Precision Analog Microcontroller ARM7TDMI MCU with 12-bit ADC & DDS DAC |
| ADUC7128BCPZ126 | 功能描述:IC DAS MCU ARM7 ADC/DDS 64-LFCSP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:MicroConverter® ADuC7xxx 標(biāo)準(zhǔn)包裝:250 系列:LPC11Uxx 核心處理器:ARM? Cortex?-M0 芯體尺寸:32-位 速度:50MHz 連通性:I²C，Microwire，SPI，SSI，SSP，UART/USART，USB 外圍設(shè)備:欠壓檢測/復(fù)位，POR，WDT 輸入/輸出數(shù):40 程序存儲器容量:96KB（96K x 8） 程序存儲器類型:閃存 EEPROM 大小:4K x 8 RAM 容量:10K x 8 電壓 - 電源 (Vcc/Vdd):1.8 V ~ 3.6 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 8x10b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 85°C 封裝/外殼:48-LQFP 包裝:托盤 其它名稱:568-9587 |
| ADUC7128BCPZ1262 | 制造商:AD 制造商全稱:Analog Devices 功能描述:Precision Analog Microcontroller ARM7TDMI MCU with 12-Bit ADC and DDS DAC |
| ADUC7128BCPZ126-RL | 功能描述:IC DAS MCU ARM7 ADC/DDS 64-LFCSP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:MicroConverter® ADuC7xxx 標(biāo)準(zhǔn)包裝:38 系列:Encore!® XP® 核心處理器:eZ8 芯體尺寸:8-位 速度:5MHz 連通性:IrDA，UART/USART 外圍設(shè)備:欠壓檢測/復(fù)位，LED，POR，PWM，WDT 輸入/輸出數(shù):16 程序存儲器容量:4KB（4K x 8） 程序存儲器類型:閃存 EEPROM 大小:- RAM 容量:1K x 8 電壓 - 電源 (Vcc/Vdd):2.7 V ~ 3.6 V 數(shù)據(jù)轉(zhuǎn)換器:- 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 105°C 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 包裝:管件 其它名稱:269-4116Z8F0413SH005EG-ND |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。