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參數(shù)資料
| 型號(hào)： | 5SLY12E1200 |
| 廠商： | ABB SWITZERLAND LTD SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 50 A, 1200 V, SILICON, RECTIFIER DIODE |
| 封裝： | 6.30 X 6.30 MM, DIE-2 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 60K |
| 代理商： | 5SLY12E1200 |
5SLY 12E1200
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1681-00 Nov 09
page 2 of 3
0
25
50
75
100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VF [V]
IF
[A
]
125 °C
25 °C
0
20
40
60
80
100
0
50
100
150
IF [A]
Ir
r[
A
],
Q
rr
[
C
]
0
2
4
6
8
10
E
re
c
[m
J
]
Irr
Erec
Qrr
Vcc = 600 V
di/dt = 1000 A/s
Tvj = 125 °C
Ls = 60 nH
Fig. 1
Typical diode forward characteristics
Fig. 2
Typical reverse recovery characteristics
vs. forward current
80
60
40
20
-0
-20
-40
-60
-80
0.0
0.5
1.0
1.5
2.0
time [s]
IR
[A
]
-100
0
100
200
300
400
500
600
700
V
R
[V
]
Vcc = 600 V
IF = 50 A
di/dt = 1000 A/s
Tvj = 125 °C
Ls = 60 nH
VR
IR
0
20
40
60
80
100
120
0
400
800
1200
1600
di/dt [A/s]
Ir
r[
A
],
Q
rr
[
C
]
0
1
2
3
4
5
6
E
re
c
[m
J
]
Irr
Erec
Qrr
VCC = 600 V
IF = 50 A
Tvj = 125 °C
Lσ = 60 nH
Fig. 3
Typical diode reverse recovery behaviour
Fig. 4
Typical reverse recovery vs. di/dt
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