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參數(shù)資料
| 型號： | 5SLY12N4500 |
| 廠商： | ABB SWITZERLAND LTD SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 110 A, 4500 V, SILICON, RECTIFIER DIODE |
| 封裝： | 14.30 X 14.30 MM, DIE--2 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 72K |
| 代理商： | 5SLY12N4500 |
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VRRM =
4500 V
IF
=
110 A
Die size: 14.3 x 14.3 mm
Doc. No. 5SYA 1674-00 Jan 08
Ultra low losses
Fast and soft reverse-recovery
Large SOA
Passivation: SIPOS and Silicon Nitride
Maximum rated values 1)
Parameter
Symbol
Conditions
min
max
Unit
Repetitive peak reverse voltage
VRRM
4500
V
Continuous forward current
IF
110
A
Repetitive peak forward current
IFRM
Limited by Tvjmax
220
A
Junction temperature
Tvj
-40
125
°C
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
Diode characteristic values 2)
Parameter
Symbol
Conditions
min
typ
max
Unit
Tvj = 25 °C
3.05
V
Continuous forward voltage
VF
IF = 110 A
Tvj = 125 °C
3.50
V
Tvj = 25 °C
3
A
Continuous reverse current
IR
VR = 4500 V
Tvj = 125 °C
2
4
mA
Tvj = 25 °C
120
A
Peak reverse recovery current
Irr
Tvj = 125 °C
132
A
Tvj = 25 °C
90
C
Recovered charge
Qrr
Tvj = 125 °C
140
C
Tvj = 25 °C
1140
ns
Reverse recovery time
trr
Tvj = 125 °C
1730
ns
Tvj = 25 °C
140
mJ
Reverse recovery energy
Erec
IF = 110 A,
VR = 2800 V,
di/dt = 350 A/s,
Lσ = 3000 nH,
Inductive load,
Switch:
2x 5SMY12N4500
Tvj = 125 °C
235
mJ
2) Characteristic values according to IEC 60747 - 2
Fast-Diode Die
5SLY 12N4500
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