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參數(shù)資料
| 型號： | 5SLY12E1200 |
| 廠商： | ABB SWITZERLAND LTD SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 50 A, 1200 V, SILICON, RECTIFIER DIODE |
| 封裝： | 6.30 X 6.30 MM, DIE-2 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 60K |
| 代理商： | 5SLY12E1200 |
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VRRM =
1200 V
IF
=
50 A
Die size: 6.3 x 6.3 mm
Doc. No. 5SYA 1681-00 Nov 09
Ultra low losses
Fast and soft reverse-recovery
Highly rugged SPT+ design
Passivation: Silicon Nitride plus Polyimide
Maximum rated values 1)
Parameter
Symbol
Conditions
min
max
Unit
Repetitive peak reverse voltage
VRRM
1200
V
Continuous forward current
IF
50
A
Repetitive peak forward current
IFRM
Limited by Tvjmax
100
A
Junction temperature
Tvj
-40
150
°C
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
Diode characteristic values 2)
Parameter
Symbol
Conditions
min
typ
max
Unit
Tvj = 25 °C
1.8
V
Continuous forward voltage
VF
IF = 50 A
Tvj = 125 °C
1.85
V
Tvj = 25 °C
100
A
Continuous reverse current
IR
VR = 1200 V
Tvj = 125 °C
0.5
mA
Tvj = 25 °C
45
A
Peak reverse recovery current
Irr
Tvj = 125 °C
55
A
Tvj = 25 °C
6.5
C
Recovered charge
Qrr
Tvj = 125 °C
12.7
C
Tvj = 25 °C
250
ns
Reverse recovery time
trr
Tvj = 125 °C
360
ns
Tvj = 25 °C
2.4
mJ
Reverse recovery energy
Erec
IF = 50 A,
VR = 600 V,
di/dt = 1000 A/s,
Lσ = 60 nH,
Inductive load,
Switch:
1x 5SMY12H1200
Tvj = 125 °C
5
mJ
2) Characteristic values according to IEC 60747 - 2
Diode-Die
5SLY 12E1200
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