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參數(shù)資料
| 型號(hào)： | 5SLY12L4500 |
| 廠商： | ABB SWITZERLAND LTD SEMICONDUCTORS |
| 元件分類(lèi)： | 整流器 |
| 英文描述： | 84 A, 4500 V, SILICON, RECTIFIER DIODE |
| 封裝： | 12.90 X 12.90 MM, DIE-1 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 56K |
| 代理商： | 5SLY12L4500 |
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VRRM =
4500 V
IF
=
84 A
Die size: 12.9 x 12.9 mm
Doc. No. 5SYA 1675-01 May 08
Ultra low losses
Fast and soft reverse-recovery
Large SOA
Passivation: SIPOS and silicon nitride plus polyimide
Maximum rated values 1)
Parameter
Symbol
Conditions
min
max
Unit
Repetitive peak reverse voltage
VRRM
4500
V
Continuous forward current
IF
84
A
Repetitive peak forward current
IFRM
Limited by Tvjmax
168
A
Junction temperature
Tvj
-40
125
°C
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
Diode characteristic values 2)
Parameter
Symbol
Conditions
min
typ
max
Unit
Tvj = 25 °C
3.1
V
Continuous forward voltage
VF
IF = 84 A
Tvj = 125 °C
3.4
V
Tvj = 25 °C
1.5
A
Continuous reverse current
IR
VR = 4500 V
Tvj = 125 °C
2
4
mA
Tvj = 25 °C
120
A
Peak reverse recovery current
Irr
Tvj = 125 °C
135
A
Tvj = 25 °C
60
C
Recovered charge
Qrr
Tvj = 125 °C
95
C
Tvj = 25 °C
680
ns
Reverse recovery time
trr
Tvj = 125 °C
870
ns
Tvj = 25 °C
85
mJ
Reverse recovery energy
Erec
IF = 84 A,
VR = 2800 V,
di/dt = 600 A/s,
Lσ = 1000 nH,
Inductive load,
Switch:
2x 5SMY12L4500
Tvj = 125 °C
135
mJ
2) Characteristic values according to IEC 60747 - 2
Fast-Diode Die
5SLY 12L4500
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