參數(shù)資料
型號(hào): 2SK3781-01R
廠商: FUJI ELECTRIC CO LTD
元件分類: JFETs
英文描述: DIODE SCHOTTKY SINGLE 25V 200mW 0.33V-vf 200mA-IFM 2mA-IF 0.5uA-IR SOD-323 3K/REEL
中文描述: 73 A, 200 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 2/4頁
文件大?。?/td> 102K
代理商: 2SK3781-01R
2
Characteristics
2SK3781-01R
FUJI POWER MOSFET
0
25
50
75
100
125
150
0
100
200
300
Allowable Power Dissipation
PD=f(Tc)
P
Tc [
°
C]
0
5
10
0
20
40
60
80
100
120
140
160
7V
20V
10V
8V
6.5V
VGS=6.0V
I
VDS [V]
Typical Output Characteristics
ID=f(VDS):80
μ
s pulse test,Tch=25
°
C
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
100
I
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80
μ
s pulse test,VDS=25V,Tch=25
°
C
0.1
1
10
100
0.1
1
10
100
g
ID [A]
Typical Transconductance
gfs=f(ID):80
μ
s pulse test,VDS=25V,Tch=25
°
C
0
10
20
30
40
50
60
70
80
90 100 110 120 130 140
0.00
0.05
0.10
0.15
8V
R
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
μ
s pulse test,Tch=25
°
C
7V
6.5V
VGS=6V
10V
20V
-50
-25
0
25
50
75
100
125
150
0.00
0.05
0.10
0.15
R
Tch [
°
C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=36.5A,VGS=10V
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