參數(shù)資料
型號： 2SK3798
廠商： Toshiba Corporation
元件分類： 基準電壓源/電流源
英文描述： RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
中文描述： 抗輻射高效，5安培開關(guān)穩(wěn)壓器
文件頁數(shù)： 1/6頁
文件大?。?/td> 222K
代理商： 2SK3798
2SK3798
2005-01-26
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
π
-MOSIV)
2SK3798
Switching Regulator Applications
Low drain-source ON resistance: R
DS (ON)
= 2.5
Ω
(typ.)
High forward transfer admittance: |Y
fs
| = 2.8 S (typ.)
Low leakage current: I
DSS
= 100
μ
A (V
DS
= 720 V)
Enhancement-mode: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
900
V
Drain-gate voltage (R
GS
=
20 k
)
V
DGR
900
V
Gate-source voltage
V
GSS
±
30
V
DC
(Note 1)
I
D
4
Drain current
Pulse (t
=
1 ms)
(Note 1)
I
DP
12
A
Drain power dissipation (Tc
=
25°C)
P
D
40
W
Single pulse avalanche energy
(Note 2)
E
AS
345
mJ
Avalanche current
I
AR
4
A
Repetitive avalanche energy (Note 3)
E
AR
4.0
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
-55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
3.125
°C/W
Thermal resistance, channel to ambient
R
th (ch-a)
62.5
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: V
DD
=
90 V, T
ch
=
25°C, L
=
39.6 mH, I
AR
=
4.0 A, R
G
=
25
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
1: Gate
2: Drain
3: Source
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
1
3
2
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