參數(shù)資料
型號(hào): 2SK3761
廠商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS?)
中文描述: 東芝場效應(yīng)晶體管硅?頻道馬鞍山類型(餅馬鞍山?)
文件頁數(shù): 5/6頁
文件大?。?/td> 89K
代理商: 2SK3761
2SK3761
2004-02-26
5
CHANNEL TEMPERATURE (INITIAL)
T
ch
(°C)
E
AS
– T
ch
A
E
A
r
th
– t
w
PULSE WIDTH t
w
(s)
0.1
10
1
10
100
1
10
100
1
10
T
PDM
t
Duty
=
t/T
Rth (ch-c)
=
1.68°C/W
Duty=0.5
0.2
0.1
0.05
0.02
0.01
0.01
N
I
t
/
t
SINGLE PULSE
15
V
15
V
TEST CIRCUIT
WAVE FORM
I
AR
B
VDSS
V
DD
V
DS
R
G
=
25
V
DD
=
90 V, L
=
2.6 mH
=
VDD
BVDSS
BVDSS
2
L
2
1
AS
60
50
30
20
0
25
50
75
100
125
150
0.01
1
0.1
1
10
100
10
1000
100
100
μ
s
*
1 ms
*
VDSS max
DRAIN-SOURCE VOLTAGE V
DS
(V)
SAFE OPERATING AREA
SINGLE NONREPETITIVE PULSE
Tc=25
CURVES
MUST
BE
DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE
.
ID max (PULSED)
*
ID max (CONTINUOUS)
*
D
D
DC OPERATION
Tc
=
25°C
40
10
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