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參數(shù)資料
| 型號： | 2SK3771-01MR |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL SILICON POWER MOSFET |
| 中文描述： | 29 A, 100 V, 0.059 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 107K |
| 代理商： | 2SK3771-01MR |
1
TO-220F
Item
Drain-source voltage
Symbol
V
DS
V
DSX
I
D
I
D(puls]
V
GS
I
AR
E
AS
Ratings
100
70
29
±116
±30
29
376.4
Unit Remarks
V
V
A
A
V
A
mJ
Note *2
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Maximum Avalanche current
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
E
AR
3.7
dV
DS
/dt
dV/dt
P
D
20
5
37
2.16
+150
-55 to +150
Operating and Storage
Temperature range
Isolation Voltage
T
ch
T
stg
V
ISO
2
Electrical characteristics (T
c
=25°C unless otherwise specified)
Thermal characteristics
Item
2SK3771-01MR
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super FAP-G Series
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Symbol Test Conditions
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
Zero Gate Voltage Drain Current I
DSS
V
DS
=100V V
GS
=0V
V
DS
=80V V
GS
=0V
V
GS
I
D
=14.5A V
GS
=10V
I
D
=14.5A V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MH
V
CC
=48V
I
D
=14.5A
V
GS
=10V
R
GS
=10
V
CC
=50V
I
D
=29A
V
GS
=10V
I
F
=29A V
GS
=0V T
ch
=25°C
I
F
=29A V
GS
=0V
-di/dt=100A/μs T
ch
=25°C
Min. Typ. Max. Units
100
3.0
V
V
μA
μA
nA
m
S
pF
nC
V
ns
μC
ns
Min. Typ. Max. Units
Thermal resistance
3.378
58
°C/W
°C/W
Symbol
BV
DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
V
SD
t
rr
Q
rr
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time t
on
Turn-Off Time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
= 250μA V
GS
=0V
I
D
= 250μA V
DS
=V
GS
T
ch
=25°C
T
ch
=125°C
=±30V
DS
=0V
mJ
kV/μs
kV/μs
W
°C
°C
kVrms
5.0
25
250
100
59
45
12
740
200
15
13
6
1100
300
22
19
6
9
20
30
12
35
15
11
1.50
8
23
10
7
1.00
110
0.5
Outline Drawings
(mm)
www.fujielectric.co.jp/fdt/scd
Equivalent circuit schematic
200407
V
GS
=-30V
Note *1
Note *3
V
DS
100V
Note *4
Tc=25°C
Ta=25°C
t=60sec. f=60Hz
=
Features
High speed switching Low on-resistance
No secondary breakdown Low driving power
Avalanche-proof
Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)
Gate(G)
Source(S)
Drain(D)
Note *1:Tch=
Note *2:StartingTch=25°C,I
AS
=12A,L=3.14mH,
V
CC
=48V,R
G
=50
E
AS
limited by maximum channel temperature
and Avalanche current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
=
Note *4:I
F
-I
D
, -di/dt = 50A/
μ
s,V
CC
BV
DSS
,Tch=
=
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