參數(shù)資料
型號: 2SK3761
廠商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS?)
中文描述: 東芝場效應(yīng)晶體管硅?頻道馬鞍山類型(餅馬鞍山?)
文件頁數(shù): 3/6頁
文件大?。?/td> 89K
代理商: 2SK3761
2SK3761
2004-02-26
3
DRAIN-SOURCE VOLTAGE V
DS
(V)
I
D
– V
DS
D
D
8
6
4
2
0
10
0
10
20
50
VGS
=
4 V
4.6
4.8
10,15
5
5.2
30
40
4.4
4.2
COMMON SOURCE
Tc
=
25°C
PULSE TEST
DRAIN CURRENT I
D
(A)
R
DS (ON)
– I
D
D
R
D
)
DRAIN CURRENT I
D
(A)
Y
fs
– I
D
F
Y
f
DRAIN-SOURCE VOLTAGE V
DS
(V)
I
D
– V
DS
D
D
5
4
2
1
0
0
2
4
6
8
VGS
=
4 V
4.2
4.4
4.6
5
6
4.8
15
10
3
10
COMMON
SOURCE
Tc
=
25°C
PULSE TEST
GATE-SOURCE VOLTAGE V
GS
(V)
I
D
– V
GS
D
D
D
D
GATE-SOURCE VOLTAGE V
GS
(V)
V
DS
– V
GS
0
4
6
8
10
0
ID
=
6 A
4
8
12
16
20
1.5
3
2
COMMON SOURCE
Tc
=
25
PULSE TEST
COMMON SOURCE
Tc
=
25°C
PULSE TEST
0.1
0.1
1
10
1
10
VGS
=
10 V 15V
COMMON SOURCE
VDS
=
20 V
PULSE TEST
0
0
2
4
6
8
10
2
10
Tc
=
55°C
25
100
4
6
8
COMMON SOURCE
VDS
=
20 V
PULSE TEST
10
0.1
10
100
0.1
1
25
100
Tc
=
55°C
1
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