參數(shù)資料
型號(hào)： 2SK3667
廠商： Toshiba Corporation
元件分類(lèi)： 基準(zhǔn)電壓源/電流源
英文描述： RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
中文描述： 抗輻射高效，5安培開(kāi)關(guān)穩(wěn)壓器
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 226K
代理商： 2SK3667
2SK3667
2004-12-07
2
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
=
±
25 V, V
DS
=
0 V
±
10
μ
A
Gate-source breakdown voltage
V
(BR) GSS
I
G
=±
10
μ
A, V
DS
=
0 V
±
30
V
Drain cut-off current
I
DSS
V
DS
=
600 V, V
GS
=
0 V
100
μ
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
=
10 mA, V
GS
=
0 V
600
V
Gate threshold voltage
V
th
V
DS
=
10 V, I
D
=
1 mA
2.0
4.0
V
Drain-source ON resistance
R
DS (ON)
V
GS
=
10 V, I
D
=
4 A
0.75
1.0
Forward transfer admittance
Y
fs
V
DS
=
10 V, I
D
=
4 A
1.5
5.5
S
Input capacitance
C
iss
1300
Reverse transfer capacitance
C
rss
12
Output capacitance
C
oss
V
DS
=
25 V, V
GS
=
0 V, f
=
1 MHz
120
pF
Rise time
t
r
20
Turn-on time
t
on
50
Fall time
t
f
35
Switching time
Turn-off time
t
off
Duty
<
1%, t
w
=
10
μ
s
150
ns
Total gate charge
Q
g
33
Gate-source charge
Q
gs
18
Gate-drain charge
Q
gd
V
DD
～
400 V, V
GS
=
10 V, I
D
=
7.5 A
15
nC
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
I
DR
7.5
A
Pulse drain reverse current
(Note 1)
I
DRP
30
A
Forward voltage (diode)
V
DSF
I
DR
=
7.5 A, V
GS
=
0 V
1.7
V
Reverse recovery time
t
rr
1200
ns
Reverse recovery charge
Q
rr
I
DR
=
7.5 A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/
μ
s
12
μ
C
Marking
R
L
=
50
0 V
10
V
V
GS
V
DD
～
200 V
I
D
=
4 A
V
OUT
50
Lot No.
(weekly code)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K3667
Part No. (or abbreviation code)
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3667(Q) 功能描述:MOSFET N-Ch 600V 7.5A Rdson 1 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK3667(Q,M) 功能描述:MOSFET MOSFET N-Ch, 600V, 7.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK3667(STA4,Q,M) 制造商:Toshiba 功能描述:TRANSISTOR
2SK3669(TE16L1,NQ) 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 100V 10A PW-MOLD 制造商:Toshiba America Electronic Components 功能描述:Semi, Discrete, MOS, FET, TOSH, Pw-Mold,
2SK366-BL(F) 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH 12mA Si 3-Pin
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