參數(shù)資料
型號(hào)： 2SK3669
廠商： Toshiba Corporation
元件分類(lèi)： 運(yùn)動(dòng)控制電子
英文描述： Single Audio Amplifier
中文描述： 單音頻放大器
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 227K
代理商： 2SK3669
2SK3669
2003-03-12
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
π
-MOS VII)
2SK3669
Switching Regulators, for Audio Amplifier and Motor
Drive Applications
Low drain-source ON resistance: R
DS
(ON)
= 95 m
(typ.)
High forward transfer admittance: |Y
fs
| = 6 S (typ.)
Low leakage current: I
DSS
=
1
00 μA (max) (V
DS
=
1
00 V)
Enhancement-mode : V
th
= 3.0 to 5.0 V (V
DS
=
1
0 V, I
D
=
1
mA)
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
100
V
Drain-gate voltage (R
GS
20 k )
V
DGR
100
V
Gate-source voltage
V
GSS
20
V
DC
(Note 1)
I
D
10
Pulse (t
w
≤
10 ms)
(Note 1)
I
DP
15
Drain current
Pulse (t
w
≤
1 ms)
(Note 1)
IDP
28
A
Drain power dissipation (Tc 25°C)
P
D
20
W
Single pulse avalanche energy
(Note 2)
E
AS
280
mJ
Avalanche current
I
AR
10
A
Repetitive avalanche energy
(Note 3)
E
AR
2
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to 150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch
c)
6.25
°C/ W
Thermal resistance, channel to
ambient
R
th (ch
a)
125
°C/ W
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: V
DD
50 V, T
ch
25°C (initial), L 3.44 mH, I
AR
10 A, R
G
25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
相關(guān)PDF資料
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