參數(shù)資料
型號(hào): 2SK3679-01MR
廠商: FUJI ELECTRIC CO LTD
元件分類: JFETs
英文描述: STD LQg MOSFET
中文描述: 9 A, 900 V, 1.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220F, 3 PIN
文件頁數(shù): 1/1頁
文件大?。?/td> 30K
代理商: 2SK3679-01MR
DATE
NAME
DRAWN
CHECKED
REVISIONS
APPROVED
D
Fuji Electric Co.,Ltd.
T
F
l
t
t
MA4LE
PRELIMINARY
1) Package
TO-220F
2) Absolute Maximum Ratings (Tc=25
Items
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive
Maximum Avalanche Current
Non-Repetitive
Maximum Avalanche Energy
unless otherwise specified)
Symbols
Units
V
A
A
V
A
mJ
*1
Maximum Drain-Source dV/dt
Peak Diode recovery dV/dt
dV
DS
/dt
dV/dt
P
D
kV/us
kV/us
W
W
*2
Operating and Storage
Temperature range
3)Electrical Characteristics (Tch=25
Items
Drain-Source Breakdown Voltage BV
DSS
Gate Threshold Voltage
unless otherwise specified)
Symbols
Test Conditions
I
D
=250uA
V
GS
(th)
I
D
=250uA
V
DS
=900V
V
GS
=0V
I
GSS
V
GS
=±30V
min.
900
3.0
---
---
---
typ.
---
---
---
---
---
max.
---
5.0
25
250
100
Units
V
V
V
GS
=0V
V
DS
=V
GS
T
ch
=25
T
ch
=125
V
DS
=0V
A
A
Gate-Source Leakage Current
nA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller) Charge
Avalanche Capability
Diode Forward On-Voltage
C
iss
C
oss
C
rss
Qg
Qgs
Qgd
I
AV
V
SD
V
DS
=25V
V
GS
=0V
f=1MHz
Vcc=450V
I
D
=9A
V
GS
=10V
L=6.51mH
I
F
=9A,VGS=0V,Tch=25
---
---
---
---
---
---
12
---
1200
140
7
32
7
7
---
1.0
---
---
---
---
---
---
---
1.5
pF
nC
Tch=25
A
V
4) Thermal Characteristics
Items
Channel to Case
Channel to Ambient
Symbols
Rth(ch-c)
Rth(ch-a)
Test Conditions
min.
typ.
max.
1.316
58.0
Units
/W
/W
*1 L=6.51mH,Vcc=90V
F
D
μ
DSS
°
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
VGS=10V
---
I
DSS
R
DS
(on)
I
D
=4.5A
---
1.58
287.7
20
5
95
2.16
150
-55
+150
Ratings
900
±9
±36
±30
T
ch
T
stg
Maximum Power Dissipation
P
D @Ta=25
c=25
2SK3679-01MR (900V/1.58
/9A)
V
GS
I
AR
E
AS
V
DS
I
D
I
D(pulse)
9
相關(guān)PDF資料
PDF描述
2SK3679 Fuji Power MOSFET SuperFAP-G series Target Specification
2SK367 N CHANNEL JUNCTION TYPE FOR AUDIO, HIGH VOLTAGE AMPLIFIER AND CONSTANT CURRENT APPLICATIONS)
2SK3683 Fuji Power MOSFET SuperFAP-G series Target Specification
2SK3683-01MR Fuji Power MOSFET SuperFAP-G series Target Specification
2SK368 N CHANNEL JUNCTION TYPE (AUDIO FREQUENCY AND HIGH VOLTAGE AMPLIFIER, CONSTANT CURRENT APPLICATIONS)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3679-01MRSC-P 制造商:Fuji Electric 功能描述:
2SK3680-01 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.09Ohm;ID +/-52A;TO-247;PD 600W;VGS +/-30V 制造商:Fuji Electric 功能描述:MOSFET N TO-247
2SK3680-01 制造商:Fuji Electric 功能描述:MOSFET N TO-247
2SK3680-01SC 制造商:Fuji Electric 功能描述:
2SK3681-01 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.12Ohm;ID +/-43A;TO-247;PD 600W;VGS +/-30V 制造商:Fuji Electric 功能描述:MOSFET N TO-247