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參數(shù)資料
| 型號： | 2SK3669 |
| 廠商： | Toshiba Corporation |
| 元件分類： | 運動控制電子 |
| 英文描述： | Single Audio Amplifier |
| 中文描述： | 單音頻放大器 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 227K |
| 代理商： | 2SK3669 |
2SK3669
2003-03-12
2
Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
16 V, V
DS
0 V
100
nA
Drain cut-off current
I
DSS
V
DS
100 V, V
GS
0 V
100
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
10 mA, V
GS
0 V
100
V
Gate threshold voltage
V
th
V
DS
10 V, I
D
1 mA
3.0
5.0
V
Drain-source ON resistance
R
DS (ON)
V
GS
10 V, I
D
5 A
95
125
m
Forward transfer admittance
|Y
fs
|
V
DS
10 V, I
D
5 A
3
6
S
Input capacitance
C
iss
480
Reverse transfer capacitance
C
rss
9
Output capacitance
C
oss
V
DS
10 V, V
GS
0 V, f 1 MHz
220
pF
Rise time
t
r
2
Turn-on time
t
on
12
Fall time
t
f
2
Switching time
Turn-off time
t
off
Duty
≤
1%, t
w
10 s
12
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
8.0
Gate-source charge
Q
gs
5.6
Gate-drain (“miller”) charge
Q
gd
V
DD
≈
80 V, V
GS
10 V,
I
D
10 A
2.4
nC
Source-Drain Diode Ratings and Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
Pulse drain reverse current
Pulse drain reverse current
(Note 1)
I
DR
10
A
(t
w
≤
10 ms) (Note 1)
I
DRP
15
A
(t
w
≤
1 ms) (Note 1)
I
DRP
28
A
Forward voltage (diode)
V
DS2F
I
DR1
10 A, V
GS
0 V
1.7
V
Reverse recovery time
t
rr
65
ns
Reverse recovery charge
Q
rr
I
DR
10 A, V
GS
0 V,
dI
DR
/dt 50 A/ s
90
nC
Marking
※
Type
K3669
※
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
0 V
10
V
V
GS
R
L
V
DD
≈
50 V
I
D
10
A
V
OUT
5
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3669(TE16L1,NQ) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 100V 10A PW-MOLD 制造商:Toshiba America Electronic Components 功能描述:Semi, Discrete, MOS, FET, TOSH, Pw-Mold, |
| 2SK366-BL(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH 12mA Si 3-Pin |
| 2SK366-GR(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH 6.5mA Si 3-Pin |
| 2SK3670(F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 150V 0.67A 3-Pin TO-92 Mod Bulk |
| 2SK3670(F,M) | 功能描述:MOSFET N-CH 制造商:toshiba semiconductor and storage 系列:* 包裝:散裝 零件狀態(tài):停產(chǎn) 安裝類型:通孔 供應商器件封裝:TO-92MOD 封裝/外殼:TO-226-3，TO-92-3 長體 標準包裝:1 |
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